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E28F020-120 PDF预览

E28F020-120

更新时间： 2024-01-23 12:17:53
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
38页 877K
描述
28F020 2048K (256K X 8) CMOS FLASH MEMORY

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中文翻译

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E28F020-120 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP包装说明：TSOP1, TSSOP32,.8,20
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.27Is Samacsys：N
最长访问时间：120 ns其他特性：MINIMUM 100K ERASE/PROGRAM CYCLES
命令用户界面：YES数据轮询：NO
耐久性：100000 Write/Erase CyclesJESD-30 代码：R-PDSO-G32
JESD-609代码：e0长度：18.4 mm
内存密度：2097152 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：32字数：262144 words
字数代码：256000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：256KX8封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装等效代码：TSSOP32,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：5 V编程电压：12 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大待机电流：0.0001 A子类别：Flash Memories
最大压摆率：0.03 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：NO类型：NOR TYPE
宽度：8 mmBase Number Matches：1

E28F020-120 数据手册

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E
28F020 2048K (256K X 8) CMOS  
FLASH MEMORY  
Flash Electrical Chip-Erase  
Command Register Architecture for  
Microprocessor/Microcontroller  
Compatible Write Interface  
2 Second Typical Chip-Erase  
Quick-Pulse Programming Algorithm  
10 µS Typical Byte-Program  
4 second Chip-Program  
Noise Immunity Features  
±10% VCC Tolerance  
Maximum Latch-Up Immunity  
through EPI Processing  
100,000 Erase/Program Cycles  
12.0 V ±5% VPP  
ETOX™ Nonvolatile Flash Technology  
EPROM-Compatible Process Base  
High-Volume Manufacturing  
Experience  
High-Performance Read  
90 ns Maximum Access Time  
CMOS Low Power Consumption  
10 mA Typical Active Current  
50 µA Typical Standby Current  
0 Watts Data Retention Power  
JEDEC-Standard Pinouts  
32-Pin Plastic Dip  
32-Lead PLCC  
32-Lead TSOP  
(See Packaging Spec., Order #231369)  
Integrated Program/Erase Stop Timer  
Extended Temperature Options  
Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write  
random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar  
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-  
board during subassembly test; in-system during final test; and in-system after sale. The 28F020 increases  
memory flexibility, while contributing to time and cost savings.  
The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Intel’s 28F020 is  
offered in 32-pin plastic DIP, 32-lead PLCC, and 32-lead TSOP packages. Pin assignments conform to  
JEDEC standards for byte-wide EPROMs.  
Extended erase and program cycling capability is designed into Intel’s ETOX™ (EPROM Tunnel Oxide)  
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field  
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the  
28F020 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse  
programming and quick-erase algorithms.  
Intel’s 28F020 employs advanced CMOS circuitry for systems requiring high-performance access speeds,  
low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance  
for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates  
into power savings when the device is deselected. Finally, the highest degree of latch-up protection is  
achieved through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA  
on address and data pins, from –1 V to VCC + 1 V.  
With Intel’s ETOX process technology base, the 28F020 builds on years of EPROM experience to yield the  
highest levels of quality, reliability, and cost-effectiveness.  
December 1997  
Order Number: 290245-009  
1234567...38

中文翻译

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