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DZT491

更新时间： 2024-02-04 07:18:54
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 259K
描述
NPN SURFACE MOUNT TRANSISTOR

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中文翻译

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DZT491 数据手册

 浏览型号DZT491的Datasheet PDF文件第2页浏览型号DZT491的Datasheet PDF文件第3页浏览型号DZT491的Datasheet PDF文件第4页 
DZT491  
NPN SURFACE MOUNT TRANSISTOR  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
3
2
1
Complementary PNP Type Available (DZT591C)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
4
SOT-223  
Mechanical Data  
•
•
Case: SOT-223  
Case Material: Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Matte Tin annealed over Copper Leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking & Type Code Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.115 grams (approximate)  
COLLECTOR  
3 E  
2 C  
2,4  
•
•
C 4  
1
BASE  
•
•
•
B
1
3
EMITTER  
TOP VIEW  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Continuous Current (Note 3)  
Peak Collector Current  
Base Current  
Symbol  
Value  
80  
60  
5
1
2
Unit  
V
V
V
A
A
mA  
W
VCBO  
VCEO  
VEBO  
IC  
ICM  
IB  
200  
1
Power Dissipation (Note 3)  
Pd  
Operating and Storage Temperature Range  
-55 to +150  
Tj, TSTG  
°C  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Cutoff Current  
Symbol Min Typ  
Max  
Unit  
Test Conditions  
100  
100  
100  
⎯
⎯
⎯
nA  
nA  
nA  
V
V
V
ICBO  
IEBO  
⎯
⎯
⎯
80  
60  
5
⎯
⎯
⎯
⎯
⎯
⎯
VCB = 60V  
VEB = 4V  
VCES = 60V  
IC = 100μA  
IC = 10mA  
Emitter-Base Cutoff Current  
Collector-Emitter Cutoff Current  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
ON CHARACTERISTICS (Note 4)  
ICES  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
IE = 100μA  
0.25  
0.5  
⎯
V
V
⎯
⎯
100  
100  
80  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
IC = 500mA, IB = 50mA  
IC = 1A, IB = 100mA  
Collector-Emitter Saturation Voltage  
VCE(SAT)  
⎯
⎯
⎯
⎯
V
V
V
V
V
CE = 5V, IC = 1mA  
CE = 5V, IC = 500mA  
CE = 5V, IC = 1A  
CE = 5V, IC = 2A  
300  
DC Current Gain  
hFE  
⎯
⎯
1.1  
1
30  
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
SMALL SIGNAL CHARACTERISTICS  
Current Gain-Bandwidth Product  
Output Capacitance  
VBE(SAT)  
VBE(on)  
⎯
⎯
IC = 1A, IB = 100mA  
IC = 1A, VCE = 5V  
V
150  
MHz  
pF  
fT  
Cobo  
⎯
⎯
⎯
10  
V
CE = 10V, IC = 50mA, f = 100MHz  
⎯
VCB = 10V, IE = 0A, f =1MHz  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300ms duty cycle ≤ 2%  
DS30946 Rev. 3 - 2  
1 of 4  
DZT491  
© Diodes Incorporated  
www.diodes.com  
1234

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