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DZTA42

更新时间： 2024-09-26 09:50:03
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 234K
描述
NPN SURFACE MOUNT TRANSISTOR

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中文翻译

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DZTA42 数据手册

 浏览型号DZTA42的Datasheet PDF文件第2页浏览型号DZTA42的Datasheet PDF文件第3页浏览型号DZTA42的Datasheet PDF文件第4页 
DZTA42  
NPN SURFACE MOUNT TRANSISTOR  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
3
2
1
Complementary PNP Type Available (DZTA92)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
4
SOT-223  
Mechanical Data  
COLLECTOR  
3 E  
2 C  
2,4  
•
•
Case: SOT-223  
Case Material: Molded Plastic, "Green" Molding  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Matte Tin annealed over Copper Leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking & Type Code Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.115 grams (approximate)  
C 4  
1
•
•
BASE  
B
1
3
EMITTER  
•
•
•
TOP VIEW  
Schematic and Pin Configuration  
Maximum Ratings  
@TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
300  
300  
6
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Continuous Collector Current  
500  
mA  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
1
Unit  
W
Power Dissipation at @TA = 25°C (Note 3)  
Pd  
125  
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)  
Operating and Storage Temperature Range  
°C/W  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
°C  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
300  
300  
6
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.1  
0.1  
IC = 100μA, IE = 0  
IC = 1mA, IB = 0  
IE = 100μA, IC = 0  
VCB = 200V, IE = 0  
VEB = 6V, IC = 0  
⎯
⎯
μA  
μA  
Emitter Cut-Off Current  
IEBO  
ON CHARACTERISTICS (Note 4)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
0.5  
0.9  
⎯
⎯
⎯
V
V
VCE(SAT)  
VBE(SAT)  
⎯
⎯
25  
40  
40  
⎯
⎯
⎯
⎯
⎯
IC = 20mA, IB = 2mA  
IC = 20mA, IB = 2mA  
IC = 1mA, VCE = 10V  
IC = 10mA, VCE = 10V  
IC = 30mA, VCE = 10V  
DC Current Gain  
hFE  
⎯
SMALL SIGNAL CHARACTERISTICS  
Transition Frequency  
Output Capacitance  
50  
MHz  
pF  
fT  
Cobo  
⎯
⎯
⎯
3
I
C = 10mA, VCE = 20V, f = 100MHz  
⎯
VCB = 20V, f = 1MHz  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, 1” x 0.85” x 0.052”; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse Test: Pulse width = 300μs, Duty Cycle ≤ 2%  
DS30582 Rev. 5 - 2  
1 of 4  
DZTA42  
© Diodes Incorporated  
www.diodes.com  
1234

中文翻译

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