5秒后页面跳转
DZT955-13 PDF预览

DZT955-13

更新时间: 2024-02-04 11:23:54
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
4页 186K
描述
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

DZT955-13 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Not Recommended包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:7.96Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:140 V配置:SINGLE
最小直流电流增益 (hFE):75JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

DZT955-13 数据手册

 浏览型号DZT955-13的Datasheet PDF文件第2页浏览型号DZT955-13的Datasheet PDF文件第3页浏览型号DZT955-13的Datasheet PDF文件第4页 
DZT955  
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Epitaxial Planar Die Construction  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT-223  
Mechanical Data  
Case: SOT-223  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.115 grams (approximate)  
TOR  
LLEC  
2,4  
CO  
3 E  
2 C  
1 B  
C 4  
T
1
ASE  
B
3
EMITTER  
EW  
VI  
OP  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
Value  
-180  
-140  
-6  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Continuous Collector Current  
Peak Pulse Current  
-4  
A
-10  
A
ICM  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
1
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
125  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C  
Operating and Storage Temperature Range  
JA  
-55 to +150  
Tj, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS31280 Rev. 2 - 2  
1 of 4  
www.diodes.com  
DZT955  
© Diodes Incorporated  

DZT955-13 替代型号

型号 品牌 替代类型 描述 数据表
DPLS4140E-13 DIODES

完全替代

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
FZT955TA DIODES

类似代替

SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
ZX5T955GTA DIODES

类似代替

140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR

与DZT955-13相关器件

型号 品牌 获取价格 描述 数据表
DZTA42 DIODES

获取价格

NPN SURFACE MOUNT TRANSISTOR
DZTA42-13 DIODES

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, GREEN,
DZTA42Q DIODES

获取价格

NPN, 300V, 0.5A, SOT223
DZTA42Q-13 DIODES

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon,
DZTA92 DIODES

获取价格

PNP SURFACE MOUNT TRANSISTOR
DZTA92-13 DIODES

获取价格

PNP SURFACE MOUNT TRANSISTOR
DZW-127M0KE19 VISHAY

获取价格

Fixed Resistor, Carbon Film, 35W, 27000000ohm, 40000V, 10% +/-Tol,
DZW-133M0KE19 VISHAY

获取价格

Fixed Resistor, Carbon Film, 35W, 33000000ohm, 40000V, 10% +/-Tol,
DZW-182M0JE03 VISHAY

获取价格

Fixed Resistor, Carbon Film, 35W, 82000000ohm, 40000V, 5% +/-Tol,
DZW-182M0JE19 VISHAY

获取价格

Fixed Resistor, Carbon Film, 35W, 82000000ohm, 40000V, 5% +/-Tol,