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DZTA92-13 PDF预览

DZTA92-13

更新时间： 2024-01-04 13:28:45
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 246K
描述
PNP SURFACE MOUNT TRANSISTOR

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中文翻译

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DZTA92-13 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G4
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.73
外壳连接：COLLECTOR最大集电极电流 (IC)：0.5 A
集电极-发射极最大电压：300 V配置：SINGLE
最小直流电流增益 (hFE)：25JESD-30 代码：R-PDSO-G4
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：4
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：1 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：50 MHzBase Number Matches：1

DZTA92-13 数据手册

 浏览型号DZTA92-13的Datasheet PDF文件第2页浏览型号DZTA92-13的Datasheet PDF文件第3页浏览型号DZTA92-13的Datasheet PDF文件第4页 
DZTA92  
PNP SURFACE MOUNT TRANSISTOR  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
3
2
1
Complementary NPN Type Available (DZTA42)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
4
SOT-223  
Mechanical Data  
COLLECTOR  
3 E  
2,4  
•
•
Case: SOT-223  
Case Material: Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
2
C
C 4  
T
1
•
•
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Matte Tin annealed over Copper Leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
1 B  
IEW  
BASE  
OP V  
3
EMITTER  
•
•
•
Marking & Type Code Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.115 grams (approximate)  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Base Current  
Continuous Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IB  
Value  
-300  
-300  
-5  
-100  
-500  
Unit  
V
V
V
mA  
mA  
IC  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
1
Unit  
W
Power Dissipation @ TA = 25°C (Note 3)  
Pd  
125  
Thermal Resistance, Junction to Ambient @ TA = 25°C (Note 3)  
Operating and Storage Temperature Range  
οC/W  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
°C  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cut-Off Current  
Emitter-Base Cut-Off Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
IC = -100μA, IE = 0  
IC = -1mA, IB = 0  
IE = -100μA, IC = 0  
VCB = -200V, IE = 0  
VEB = -3V, IC = 0  
-300  
-300  
-5  
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-0.25  
-0.1  
⎯
⎯
μA  
μA  
IEBO  
ON CHARACTERISTICS (Note 4)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
-0.5  
-0.9  
⎯
⎯
⎯
V
V
VCE(SAT)  
VBE(SAT)  
⎯
⎯
25  
40  
25  
⎯
⎯
⎯
⎯
⎯
IC = -20mA, IB = -2mA  
IC = -20mA, IB = -2mA  
IC = -1mA, VCE = -10V  
IC = -10mA, VCE = -10V  
IC = -30mA, VCE = -10V  
DC Current Gain  
V
hFE  
SMALL SIGNAL CHARACTERISTICS  
Gain-Bandwidth Product  
Output Capacitance  
50  
MHz  
pF  
fT  
Cobo  
⎯
⎯
⎯
6
I
C = -10mA, VCE = -20V, f = 100MHz  
⎯
VCB = -20V, f = 1MHz  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, 1“ x 0.85” x 0.052”; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d< = 2%  
DS30521 Rev. 4 - 2  
1 of 4  
DZTA92  
© Diodes Incorporated  
www.diodes.com  
1234

中文翻译

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DZTA92-13 替代型号

型号 品牌 替代类型 描述 数据表
FZTA92TA DIODES

类似代替

 Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
PZTA92T1 ONSEMI

功能相似

 PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

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