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DZT658

更新时间： 2024-02-21 05:09:16
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 147K
描述
NPN SURFACE MOUNT TRANSISTOR

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DZT658 数据手册

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DZT658  
NPN SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
•
•
•
•
Epitaxial Planar Die Construction  
3
2
1
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
4
SOT-223  
Mechanical Data  
COLLECTOR  
2,4  
•
•
Case: SOT-223  
Case Material: Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish — Matte Tin annealed over Copper Leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.115 grams  
3 E  
2 C  
1 B  
C 4  
1
BASE  
•
•
3
EMITTER  
TOP VIEW  
•
•
•
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
400  
400  
5
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Continuous Collector Current  
Peak Pulse Current  
0.5  
1
A
A
ICM  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
1
Unit  
W
Power Dissipation @TA = 25°C (Note 3)  
PD  
125  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C  
Operating and Storage Temperature Range  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit Test Condition  
Off Characteristics  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
400  
400  
5
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
IC = 100μA, IE = 0  
IC = 10mA, IB = 0  
IE = 100μA, IC = 0  
VCB = 320V, IE = 0  
VEB = 4V, IC = 0  
V
100  
nA  
nA  
⎯
⎯
Emitter Cutoff Current  
100  
IEBO  
On Characteristics (Note 4)  
IC = 20mA, IB = 1mA  
IC = 50mA, IB = 5mA  
⎯
⎯
⎯
0.075  
0.06  
0.08  
0.3  
0.25  
0.5  
V
V
V
Collector-Emitter Saturation Voltage  
VCE(SAT)  
I
C = 100mA, IB = 10mA  
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
0.9  
1
V
V
VBE(SAT)  
VBE(ON)  
⎯
⎯
⎯
⎯
IC = 100mA, IB = 10mA  
VCE = 5V, IC = 100mA  
VCE = 5V, IC = 1mA  
⎯
⎯
⎯
50  
50  
40  
110  
100  
85  
DC Current Gain  
hFE  
⎯
VCE = 5V, IC = 100mA  
V
CE = 10V, IC = 200mA  
AC Characteristics  
Transition Frequency  
Output Capacitance  
50  
MHz  
pF  
fT  
Cobo  
ton  
⎯
⎯
138  
175  
⎯
10  
VCE = 20V, IC = 30mA, f = 30MHz  
VCB = 20V, f = 1MHz  
⎯
⎯
⎯
ns  
ns  
VCC = 100V, IC = 100mA  
IB1 = 10mA, IB2 = -20mA  
⎯
⎯
Switching Times  
toff  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, pad layout as shown on page 3 or in Diodes Inc. suggested pad layout document AP02001,  
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.  
DS31308 Rev. 2 - 2  
1 of 3  
www.diodes.com  
DZT658  
© Diodes Incorporated  
123

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