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DZ950N36K-K PDF预览

DZ950N36K-K

更新时间: 2024-09-18 08:57:15
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
9页 158K
描述
Rectifier Diode,

DZ950N36K-K 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.78 V最大非重复峰值正向电流:35000 A
元件数量:1最高工作温度:150 °C
最大输出电流:950 A最大重复峰值反向电压:3600 V
子类别:Rectifier DiodesBase Number Matches:1

DZ950N36K-K 数据手册

 浏览型号DZ950N36K-K的Datasheet PDF文件第2页浏览型号DZ950N36K-K的Datasheet PDF文件第3页浏览型号DZ950N36K-K的Datasheet PDF文件第4页浏览型号DZ950N36K-K的Datasheet PDF文件第5页浏览型号DZ950N36K-K的Datasheet PDF文件第6页浏览型号DZ950N36K-K的Datasheet PDF文件第7页 
Datenblatt / Data sheet  
N
Netz-Dioden-Modul  
Rectifier Diode Module  
DZ950N  
DZ950N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
PeriodischeSpitzensperrspannungT = -40°C... T  
3600  
3700  
4000 V  
4400 V  
VRRM  
vj  
vj max  
repetitive peak reverse voltages  
4100 V  
4500 V  
Stoßspitzensperrspannung  
Tvj = +25°C... Tvj max  
VRSM  
non-repetitive peak reverse voltage  
1500 A  
950 A  
Durchlaßstrom-Grenzeffektivwert  
maximum RMS on-state current  
IFRMSM  
IFAVM  
IFSM  
Dauergrenzstrom  
average on-state current  
TC = 100 °C  
35.000 A  
29.000 A  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
6.125.000 A²s  
4.205.000 A²s  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
1,78 V  
max.  
Tvj = Tvj max , iF = 3000 A  
Tvj = Tvj max  
vF  
on-state voltage  
0,85 V  
Schleusenspannung  
threshold voltage  
V(TO)  
rT  
0,28 m  
100 mA  
Ersatzwiderstand  
slope resistance  
Tvj = Tvj max  
max.  
max.  
Sperrstrom  
reverse current  
Tvj = Tvj max , vR = VRRM  
iR  
Isolations-Prüfspannung  
RMS, f = 50 Hz, t = 1 sec  
RMS, f = 50 Hz, t = 1 min  
VISOL  
kV  
kV  
3,6  
3,0  
insulation test voltage  
Thermische Eigenschaften / Thermal properties  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro Modul / per Module, Θ = 180° sin RthJC  
pro Modul / per Module, DC  
0,042 °C/W  
max. 0,0405 °C/W  
pro Modul / per Module  
pro Zweig / per arm  
max.  
0,01 °C/W  
160  
Übergangs-Wärmewiderstand  
RthCH  
Tvj max  
Tc op  
Tstg  
thermal resistance, case to heatsink  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
°C  
Betriebstemperatur  
operating temperature  
- 40...+150 °C  
- 40...+150 °C  
Lagertemperatur  
storage temperature  
C. Drilling  
date of publication: 06.05.03  
revision:  
prepared by:  
1
approved by: M. Leifeld  
BIP AM / 00-09-28, K.-A. Rüther  
A22/00  
Seite/page  
1/9  

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