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DXT5551-13 PDF预览

DXT5551-13

更新时间： 2024-10-17 19:28:43
品牌 Logo 应用领域
美台 - DIODES 开关晶体管
页数 文件大小 规格书
4页 142K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-4

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DXT5551-13 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PSSO-F3
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：19 weeks
风险等级：5.71外壳连接：COLLECTOR
最大集电极电流 (IC)：0.6 A集电极-发射极最大电压：160 V
配置：SINGLE最小直流电流增益 (hFE)：30
JESD-30 代码：R-PSSO-F3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：1 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：FLAT端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：100 MHz
Base Number Matches：1

DXT5551-13 数据手册

 浏览型号DXT5551-13的Datasheet PDF文件第2页浏览型号DXT5551-13的Datasheet PDF文件第3页浏览型号DXT5551-13的Datasheet PDF文件第4页 
DXT5551  
NPN SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
Complementary PNP Type Available (DXT5401)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT89-3L  
Mechanical Data  
COLLECTOR  
2,4  
•
•
Case: SOT89-3L  
Case Material: Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
3 E  
2 C  
C 4  
1
•
•
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Matte Tin annealed over Copper Leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
BASE  
B
1
3
EMITTER  
•
•
•
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.072 grams (approximate)  
TOP VIEW  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
Value  
180  
160  
6.0  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
V
V
Collector Current  
600  
mA  
Thermal Characteristics  
Characteristic  
Power Dissipation @TA = 25°C (Note 3)  
Symbol  
PD  
Value  
1
Unit  
W
125  
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)  
Operating and Storage Temperature Range  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Symbol  
Min  
Max  
Unit  
Test Condition  
180  
160  
6.0  
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
⎯
⎯
⎯
I
I
I
C = 100μA, IE = 0  
C = 1.0mA, IB = 0  
E = 10μA, IC = 0  
Emitter-Base Breakdown Voltage  
nA  
μA  
nA  
VCB = 120V, IE = 0  
VCB = 120V, IE = 0, TA = 100°C  
VEB = 4.0V, IC = 0  
Collector Cutoff Current  
50  
50  
ICBO  
IEBO  
⎯
⎯
Emitter Cutoff Current  
ON CHARACTERISTICS (Note 4)  
VCE = 5.0V, IC = 1.0mA  
VCE = 5.0V, IC = 10mA  
VCE = 5.0V, IC = 50mA  
IC = 10mA, IB = 1.0mA  
80  
80  
30  
⎯
250  
⎯
DC Current Gain  
hFE  
⎯
0.15  
0.20  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
V
VCE(SAT)  
VBE(SAT)  
⎯
⎯
I
C = 50mA, IB = 5.0mA  
IC = 10mA, IB = 1.0mA  
C = 50mA, IB = 5.0mA  
1.0  
I
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
Small Signal Current Gain  
Current Gain-Bandwidth Product  
Noise Figure  
6.0  
200  
300  
8.0  
pF  
⎯
MHz  
Cobo  
hfe  
fT  
⎯
50  
100  
⎯
VCB = 10V, f = 1.0MHz, IE = 0  
V
V
V
CE = 10V, IC = 1.0mA, f = 1.0kHz  
CE = 10V, IC = 10mA, f = 100MHz  
CE = 5.0V, IC = 200μA, RS = 1.0kΩ, f = 1.0kHz  
NF  
dB  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our  
website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.  
DS31225 Rev. 2 – 2  
1 of 4  
www.diodes.com  
DXT5551  
© Diodes Incorporated  
1234

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DXT5551-13 替代型号

型号 品牌 替代类型 描述 数据表
ZXTN5551ZTA DIODES

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