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DXTA42

更新时间： 2024-10-17 12:20:07
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 155K
描述
NPN SURFACE MOUNT TRANSISTOR

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DXTA42 数据手册

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DXTA42  
NPN SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
•
•
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking & Type Code Information: See Page 3  
Ordering Information: See Page 3  
Weight: 54.8mg (approximate)  
Complementary PNP Type Available (DXTA92)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
•
•
•
•
•
TOR  
LLEC  
CO  
3 E  
2,4  
2 C  
1 B  
C 4  
1
ASE  
B
3
EW  
Device Schematic  
EMITTER  
Pin Out Configuration  
VI  
OP  
T
Top View  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
300  
300  
6
Unit  
V
V
V
mA  
500  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 3) @ TA = 25°C  
Thermal Resistance, Junction to Ambient (Note 3)  
Operating and Storage Temperature Range  
Symbol  
PD  
Rθ  
Value  
1
Unit  
W
125  
°C/W  
°C  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
300  
300  
6
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
C = 100μA, IE = 0  
C = 1mA, IB = 0  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
E = 100μA, IC = 0  
0.1  
⎯
⎯
μA VCB = 200V, IE = 0  
μA VEB = 6V, IC = 0  
Emitter Cut-off Current  
0.1  
IEBO  
ON CHARACTERISTICS (Note 4)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
0.5  
0.9  
V
V
VCE(SAT)  
VBE(SAT)  
⎯
⎯
⎯
⎯
IC = 20mA, IB = 2mA  
IC = 20mA, IB = 2mA  
IC = 1mA, VCE = 10V  
IC = 10mA, VCE = 10V  
IC = 30mA, VCE = 10V  
25  
40  
40  
Static Forward Current Transfer Ratio  
hFE  
⎯
⎯
⎯
SMALL SIGNAL CHARACTERISTICS  
Transition Frequency  
IC = 10mA, VCE = 20V,  
f = 100MHz  
50  
MHz  
pF  
fT  
⎯
⎯
⎯
Output Capacitance  
3
Cobo  
⎯
VCB = 20V, f = 1MHz  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.  
1 of 4  
www.diodes.com  
December 2009  
© Diodes Incorporated  
DXTA42  
Document number: DS31158 Rev. 4 - 2  
1234

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