Datasheet > DXTA92

DXTA92

更新时间： 2024-10-17 09:59:31

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	242K
描述
PNP SURFACE MOUNT TRANSISTOR

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中文翻译

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DXTA92 数据手册

DXTA92

PNP SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

Complementary NPN Type Available (DXTA42)

Ideally Suited for Automated Assembly Processes

Ideal for Medium Power Switching or Amplification Applications

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

SOT89-3L

Mechanical Data

TOR

LLEC

2,4

•

Case: SOT89-3L

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

3 E

2 C

1 B

C 4

•

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

ASE

•

Marking & Type Code Information: See Page 3

Ordering Information: See Page 3

Weight: 0.072 grams (approximate)

EMITTER

Schematic and Pin Configuration

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Symbol

Value

-300

-5

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

-500

Thermal Characteristics

Characteristic

Power Dissipation (Note 3) @ T_A= 25°C

Symbol

P_D

R_θ

Value

Unit

Thermal Resistance, Junction to Ambient (Note 3)

125

°C/W

°C

Operating and Storage Temperature Range

-55 to +150

T_j, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Conditions

_C= -100μA, I_E= 0

-300

-5

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

⎯

-0.25

-0.1

_C= -1mA, I_B= 0

_E= -100μA, I_C= 0

Collector-Base Cut-off Current

⎯

μA

_CB= -200V, I_E= 0

Emitter-Base Cut-off Current

I_EBO

μA V_EB= -3V, I_C= 0A

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

-0.5

-0.9

V_CE(SAT)

V_BE(SAT)

⎯

_C= -20mA, I_B= -2mA

I_C= -1mA, V_CE= -10V

I_C= -10mA, V_CE= -10V

I_C= -30mA, V_CE= -10V

⎯

Static Forward Current Transfer Ratio

h_FE

SMALL SIGNAL CHARACTERISTICS

Gain-Bandwidth Product

I_C= -10mA, V_CE= -20V,

f = 100MHz

MHz

f_T

⎯

Output Capacitance

C_obo

⎯

V_CB= -20V, f = 1MHz

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

DS31159 Rev. 4 - 2

1 of 4

www.diodes.com

DXTA92

12 3 4

中文翻译

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