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DXT751-13 PDF预览

DXT751-13

更新时间: 2024-10-17 09:59:31
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关
页数 文件大小 规格书
4页 166K
描述
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

DXT751-13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:19 weeks
风险等级:5.73Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):145 MHzBase Number Matches:1

DXT751-13 数据手册

 浏览型号DXT751-13的Datasheet PDF文件第2页浏览型号DXT751-13的Datasheet PDF文件第3页浏览型号DXT751-13的Datasheet PDF文件第4页 
DXT751  
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Epitaxial Planar Die Construction  
Complementary NPN Type Available (DXT651)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT89-3L  
TOR  
LLEC  
CO  
Mechanical Data  
2,4  
3 E  
2 C  
1 B  
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
C 4  
T
1
ASE  
B
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
3
EMITTER  
VIEW  
OP  
Schematic and Pin Configuration  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.072 grams (approximate)  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Pulse Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-80  
-60  
-5  
-3  
-6  
Unit  
V
V
V
A
A
ICM  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
1
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
125  
°C/W  
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C  
Operating and Storage Temperature Range  
JA  
-55 to +150  
°C  
TJ, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS31185 Rev. 3 - 2  
1 of 4  
www.diodes.com  
DXT751  
© Diodes Incorporated  

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