生命周期: | Active | 零件包装代码: | SC-70 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | HTS代码: | 8541.21.00.95 |
风险等级: | 5.83 | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC): | 0.5 A | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 56 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DTD114EC | ROHM |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOL | |
DTD114ECA | BL Galaxy Electrical |
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50V,500mA,NPN Bipolar Digital Transistor | |
DTD114ECHZG | ROHM |
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DTD114ECHZG是适合逆变器、接口、驱动器用途的车载型高可靠性晶体管。 | |
DTD114ECT116 | ROHM |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOL | |
DTD114EF | ROHM |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTR, 3 | |
DTD114EFC1 | ROHM |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTR, 3 | |
DTD114EG-AE3-R | UTC |
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NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) | |
DTD114EG-AL3-R | UTC |
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NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) | |
DTD114EK | ROHM |
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Digital transistors (built-in resistors) | |
DTD114EK_09 | ROHM |
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500mA / 50V Digital transistors (with built-in resistors) |