Datasheet > DTD114EK_1

DTD114EK_1

更新时间： 2024-10-01 03:30:47

品牌	Logo	应用领域
罗姆 - ROHM		晶体电阻器数字晶体管
页数	文件大小	规格书
3页	97K
描述
500mA / 50V Digital transistors (with built-in resistors)

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中文翻译

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数据手册

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DTD114EK_1 数据手册

DTD114EK / DTD114ES

Transistors

500mA / 50V Digital transistors

(with built-in resistors)

DTD114EK / DTD114ES

zApplications

zExternal dimensions (Unit : mm)

Inverter, Interface, Driver

2.9

1.1

0.8

DTD114EK

0.4

( )

zFeature

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input resistors

(see equivalent circuit).

(

)

( )

0.95 0.95

1.9

0.15

(1) GND

(2) IN

(3) OUT

2) The bias resistors consist of thin-film resistors with

complete isolation to allow negative biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

ROHM : SMT3

EIAJ : SC-59

Each lead has same dimensions

Addreviated symbol : F24

3) Only the on / off conditions need to be set for operation,

making the device design easy.

DTD114ES

4.0

2.0

zStructure

NPN epitaxial planar silicon transistor

(Resistor built-in type)

0.45

2.5

0.45

0.5

(1) GND

(2) OUT

(3) IN

ROHM : SPT

EIAJ : SC-72

5.0

(1) (2) (3)

zPackaging specifications

Package

SMT3

SPT

Packaging type

Code

Taping Taping

T146

3000

5000

−

Basic ordering

unit (pieces)

Part No.

DTD114EK

DTD114ES

−

zAbsolute maximum ratings (Ta=25°C)

zEquivalent circuit

Limits

Parameter

Symbol

Unit

DTD114EK DTD114ES

OUT

Supply voltage

−10 to +40

500

Input voltage

GND

OUT

Output current

Power dissipation

Junction temperature

Storage temperature

200

300

Tstg

150

−55 to +150

GND

R1=10kΩ R2=10kΩ

Rev.A

1/2

12 3

中文翻译

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