Datasheet > DTC123EM3

DTC123EM3

更新时间： 2024-10-31 12:50:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体数字晶体管
页数	文件大小	规格书
10页	127K
描述
Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DTC123EM3 数据手册

MUN2231, MMUN2231L,

MUN5231, DTC123EE,

DTC123EM3

Digital Transistors (BRT)

R1 = 2.2 kW, R2 = 2.2 kW

http://onsemi.com

PIN CONNECTIONS

NPN Transistors with Monolithic Bias

Resistor Network

PIN 3

COLLECTOR

(OUTPUT)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

MARKING DIAGRAMS

• Simplifies Circuit Design

• Reduces Board Space

SC−59

CASE 318D

STYLE 1

• Reduces Component Count

XX MG

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

SOT−23

CASE 318

STYLE 6

XXX MG

Compliant

MAXIMUM RATINGS (T = 25°C)

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

SC−70/SOT−323

CASE 419

CBO

CEO

XX MG

Vdc

STYLE 3

100

mAdc

Vdc

SC−75

CASE 463

STYLE 1

IN(fwd)

XX M

Input Reverse Voltage

Vdc

IN(rev)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

SOT−723

CASE 631AA

STYLE 1

XXX

Specific Device Code

Date Code*

Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

Publication Order Number:

August, 2012 − Rev. 0

DTC123E/D

12 3 4 5 6 7...10

中文翻译

下载PDF

与DTC123EM3相关器件

型号	品牌	获取价格	描述	数据表
DTC123EM3T5G	ONSEMI	获取价格	Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resis
DTC123EMFHA	ROHM	获取价格	车载数字晶体管与通用品共用数据表。下订单时，请注意下列型号命名方式，编写为车载型号。
DTC123EMT2L	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
DTC123EN	ETC	获取价格	TRANSISTOR \| TO-92
DTC123ERLRM	ONSEMI	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226, 3 PIN
DTC123ERLRP	ONSEMI	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226, 3 PIN
DTC123ES	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| TO-92VAR
DTC123ESA	ROHM	获取价格	Digital transistors (built-in resistors)
DTC123ESA	CJ	获取价格	TO-92S
DTC123ESATP	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC

与DTC123EM3相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

20
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

21
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

53

产品中心

服务支持

精选活动

关于我们

帮助中心

DTC123EM3

DTC123EM3 数据手册

与DTC123EM3相关器件

与DTC123EM3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DTC123EM3

DTC123EM3 数据手册

与DTC123EM3相关器件

与DTC123EM3相关文章

您还可以找

您在本页遇到什么问题？