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DTC114TE

更新时间： 2024-02-19 11:41:01
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关光电二极管
页数 文件大小 规格书
4页 95K
描述
Bias Resistor Transistor

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DTC114TE 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：IN-LINE, R-PSIP-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.57
Is Samacsys：N其他特性：DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC)：0.07 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：68
JESD-30 代码：R-PSIP-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：0.3 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DTC114TE 数据手册

 浏览型号DTC114TE的Datasheet PDF文件第2页浏览型号DTC114TE的Datasheet PDF文件第3页浏览型号DTC114TE的Datasheet PDF文件第4页 
Order this document  
by DTC114TE/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon Surface Mount Transistor with  
Monolithic Bias Resistor Network  
3
The BRT (Bias Resistor Transistor) contains a single transistor with a  
monolithic bias network consisting of two resistors; a series base resistor and a  
base–emitter resistor. These digital transistors are designed to replace a single  
device and its external resistor bias network. The BRT eliminates these  
individual components by integrating them into a single device. The DTC114TE  
is housed in the SOT–416/SC–90 package which is ideal for low power surface  
mount applications where board space is at a premium.  
2
1
CASE 463–01, STYLE 1  
SOT–416/SC–90  
•
•
•
•
Simplifies Circuit Design  
Reduces Board Space  
OUT (3)  
R
1
Reduces Component Count  
IN (1)  
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.  
GND (2)  
R
= 10 kΩ  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector–Base Voltage  
Symbol  
Value  
50  
Unit  
V
V
Vdc  
Vdc  
CBO  
Collector–Emitter Voltage  
Collector Current  
50  
CEO  
I
C
100  
mAdc  
DEVICE MARKING  
DTC114TE = 94  
THERMAL CHARACTERISTICS  
(1)  
Power Dissipation @ T = 25°C  
P
*125  
mW  
°C  
A
D
Operating and Storage Temperature Range  
Junction Temperature  
T , T  
J stg  
–55 to +150  
150  
T
°C  
J
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Characteristic  
Symbol  
Min  
50  
Typ  
—
Max  
—
Unit  
Collector–Base Breakdown Voltage (I = 50 µAdc)  
V
V
Vdc  
Vdc  
C
(BR)CBO  
Collector–Emitter Breakdown Voltage (I = 1.0 mAdc)  
50  
—
—
C
(BR)CEO  
Emitter–Base Breakdown Voltage (I = 50 µAdc)  
V
5.0  
—
—
—
Vdc  
E
(BR)EBO  
Collector–Base Cutoff Current (V  
= 50 Vdc)  
I
—
500  
500  
600  
0.3  
13  
nAdc  
nAdc  
—
CB  
CBO  
Emitter–Base Cutoff Current (V  
EB  
= 4.0 Vdc)  
I
—
—
EBO  
DC Current Gain (I = 1.0 mAdc, V  
= 5 Vdc)  
h
FE  
100  
—
300  
—
C
CE  
Collector–Emitter Saturation Voltage (I = 10 mAdc, I = 1.0 mAdc)  
V
Vdc  
C
B
CE(sat)  
Input Resistance  
R
7.0  
10  
kOhms  
1
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.  
* Typical electrical characteristic curves are not available at this time.  
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.  
Thermal Clad is a trademark of the Bergquist Company  
Motorola, Inc. 1996  
1234

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