Datasheet > DTC114TE_11

DTC114TE_11

更新时间： 2022-10-28 09:23:17

品牌	Logo	应用领域
美微科 - MCC		晶体数字晶体管
页数	文件大小	规格书
3页	204K
描述
NPN Digital Transistor

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数据手册

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DTC114TE_11 数据手册

M C C

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20736 Marilla Street Chatsworth

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Micro Commercial Components

DTC114TE

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

NPN Digital Transistor

xꢀ Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors (see equivalent circuit)

xꢀ The bias resistors consist of thin-film resistors with complete

isolation to allow negative biasing of the input. They also have the

advantage of almost completely eliminating parasitic effects

xꢀ Only the on/off conditions need to be set for operation, making

device design easy

SOT-523

Absolute Maximum Ratings

1. Base

Parameter

Collector-Base Voltage

Symbol

V_CBO

Value

Unit

2. Emitter

3. Collector

Collector-Emitter Voltage

Emitter-Base voltage

V_CEO

V_EBO

Collector Current-Continuous

I_C

100

Collector Dissipation

P_C

150

Junction Temperature

T_J

150

Storage Temperature Range

T_STG

-55~150

DIMENSIONS

Electrical Characteristics

Sym

Parameter

Collector-Base Breakdown Voltage

(I_C=50uA, I_E=0)

Min

Typ

Max Unit

INCHES

MAX

DIM

MIN

1.50

0.75

1.45

MAX

1.70

0.85

1.75

NOTE

V_(BR)CBO

---

.059

.030

.057

.067

.033

.069

Collector-Emitter Breakdown Voltage

(I_C=1mA, I_B=0)

V_(BR)CEO

V_(BR)EBO

I_CBO

---

.020 Nominal

0.50Nominal

0.90

.000

.70

.100

.25

.035

.000

.028

.004

.010

.043

.004

.031

.008

.014

1.10

Emitter-Base Breakdown Voltage

(I_E=50uA, I_C=0)

---

.100

0.80

.200

.35

Collector Cut-off Current

(V_CB=50V, I_E=0)

---

0.5

Emitter Cut-off Current

(V_EB=4V, I_C=0)

I_EBO

---

0.5

---

DC Current Gain

(V_CE=5V, I_C=1mA)

h_FE

100

300

600

Collector-Emitter Saturation Voltage

(I_C=10mA, I_B=1mA)

V_CE(sat)

R₁

---

0.3

---

Input Resistor

K¡

MHz

Transition Frequency

(V_CE=10V, I_C=-5mA, f=100MHz)

f_T

---

250

*Marking: 04

www.mccsemi.com

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Revision: A

2011/01/01

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