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DTC114TKA

更新时间： 2024-09-24 06:54:51
品牌 Logo 应用领域
RECTRON 晶体数字晶体管
页数 文件大小 规格书
3页 344K
描述
SOT-23-3L DIGITAL TRANSISTOR TRANSISTORS(NPN)

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中文翻译

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DTC114TKA 数据手册

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DTC114TKA  
SOT-23-3L DIGITAL TRANSISTOR  
TRANSISTORS(NPN)  
FEATURES  
Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistors.  
*
The bias resistors consist of thin-film resistors with co-  
mplete isolation to without connecting extemal input.  
They also have the advantage of almost completely eli-  
minating parasitic effects.  
*
SOT-23-3L  
Only the on/off conditions need to be set for operation mark-  
ing device design easy.  
*
MECHANICAL DATA  
* Case: Molded plastic  
(1)  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
(3)  
(2)  
* Weight: 0.009 gram  
(
)
)
.067 1.70  
(
)
f .028 0.70  
(
.059 1.50  
(
)
0.116 2.95  
0.104(2.65)  
R.002  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(
)
.05  
Ratings at 25OC ambient temperature unless otherwise specified.  
(
)
)
.049 1.25  
(
.041 1.05  
(2)  
(1)  
(
)
)
.004 0.10  
(1) Base  
(
.000 0.00  
(2) Emitter  
(3) Collector  
Dimensions in inches and (millimeters)  
(3)  
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )  
RATINGS  
SYMBOL  
VALUE  
UNITS  
V
Collector-Base Voltage  
V
CBO  
V
CEO  
50  
50  
5
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
EBO  
Collector Current-Continuous  
Collector Dissipation  
I
100  
200  
mA  
mW  
oC  
C
P
C
T
150  
Junction Temperature  
j
oC  
Junction and storage Temperature  
-55 to +150  
T
, T  
stg  
J
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS SYMBOL  
Collector-base breakdown voltage (I = 50µA, I =0)  
MIN.  
50  
TYP.  
-
MAX.  
-
UNITS  
V
V
V
C
E
(BR)CBO  
Collector-emitter breakdown voltage (I = 1mA, I =0)  
50  
5
-
-
-
-
V
V
C
B
(BR)CEO  
Emitter-base breakdown voltage (I = 50µA, I =0)  
V
(BR)EBO  
E
C
Collector cut-off current (V = 50V, I =0)  
I
-
-
0.5  
0.5  
600  
0.3  
µA  
µA  
-
CB  
E
CBO  
Emitter cut-off current (V = 4V, I =0)  
I
-
100  
-
-
300  
-
EB  
C
EBO  
DC current gain (V = 5V, I = 1mA)  
h
CE  
C
FE  
Collector-emitter saturation voltage (I = 10mA, I = 1mA)  
V
CE(sat)  
V
C
B
Transition frequency (V = 10V, I = -5mA, f=100MHz)  
f
-
250  
10  
-
MHz  
KΩ  
CE  
E
T
R1  
Input resistor  
NOTE: "Fully ROHS compliant", "100% Sn plating (Pb-free)".  
7
13  
2006-3  
123

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