DTC114TEB

更新时间： 2024-11-12 06:54:51

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
3页	57K
描述
100mA / 50V Digital transistors

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DTC114TEB 数据手册

Transistors

! DTC114TEB

! ! ! ! ! ! ! ! ! ! ! ! ! !

100mA / 50V Digital transistors

(with built-in resistors)

DTC114TEB

zApplications

zDimensions (Unit : mm)

Inverter, Interface, Driver

EMT3F

1.6

0.7

zFeatures

0.26

(3)

1) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of

almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for

operation, making the device design easy.

(1)

0.5 0.5

1.0

(2)

0.13

(1) Base

(2) Emitter

(3) Collector

Each lead has same dimensions

Abbreviated symbol : 04

zStructure

zEquivalent circuit

NPN silicon epitaxial planar transistor type

(Resistor built-in)

zPackaging specifications

Package

EMT3F

Taping

Packaging type

Code

B : Base

C : Collector

E : Emitter

Part No.

Basic ordering unit (pieces)

3000

DTC114TEB

R1=10kΩ

zAbsolute maximum ratings (Ta=25qC)

Parameter

Symbol

Limits

Unit

Collector-Base voltage

Collector-Emitter voltage

CBO

CEO

Emitter-Base voltage

Collector current

EBO

100

°C

∗1

Power dissipation

150

Junction temperature

Range of Storage temperature

Tstg

150

−55 to +150

°C

∗1 Each terminal mounted on a recommended land

1/2

12 3

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