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DTC114TE/D PDF预览

DTC114TE/D

更新时间: 2024-02-07 05:41:21
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 78K
描述
Bias Resistor Transistor NPN

DTC114TE/D 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.57
Is Samacsys:N其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC):0.07 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):68
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTC114TE/D 数据手册

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ON Semiconductort  
DTC114YE  
Product Preview  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
3
2
1
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base–emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. The DTC114YE is housed in the  
SOT–416/SC–90 package which is ideal for low power surface mount  
applications where board space is at a premium.  
CASE 463–01, STYLE 1  
SOT–416/SC–90  
OUT (3)  
R
1
IN (1)  
Simplifies Circuit Design  
R
2
Reduces Board Space  
GND (2)  
Reduces Component Count  
R = 10 k  
1
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.  
R = 47 kΩ  
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Symbol  
Value  
50  
Unit  
Output Voltage  
V
O
Vdc  
Vdc  
Input Voltage  
V
I
40  
Output Current  
I
O
100  
mAdc  
DEVICE MARKING  
DTC114YE = 69  
THERMAL CHARACTERISTICS  
(1)  
Power Dissipation @ T = 25°C  
P
*125  
mW  
°C  
A
D
Operating and Storage Temperature Range  
Junction Temperature  
T , T  
J
–55 to +150  
150  
stg  
T
°C  
J
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
0.3  
Unit  
Input Off Voltage (V = 5.0 Vdc, I = 100 µAdc)  
V
I(off)  
V
I(on)  
Vdc  
Vdc  
O
O
Input On Voltage (V = 0.3 Vdc, I = 1.0 mAdc)  
1.4  
O
O
Output On Voltage (I = 5.0 mAdc, I = 0.25 mAdc)  
V
O(on)  
0.3  
0.88  
500  
Vdc  
O
I
Input Current (V = 5.0 Vdc)  
I
I
mAdc  
nAdc  
I
Output Cutoff Current (V = 50 Vdc)  
I
O
O(off)  
DC Current Gain (V = 5.0 Vdc, I = 5.0 mAdc)  
G
68  
7.0  
O
O
I
Input Resistance  
Resistance Ratio  
R
10  
0.21  
13  
kOhms  
1
R /R  
0.17  
0.25  
1
2
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.  
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinuethis product without notice.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 2  
DTC114YE/D  

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