Datasheet > DTB723YE_09

DTB723YE_09

更新时间： 2024-02-15 22:36:53

品牌	Logo	应用领域
罗姆 - ROHM		晶体电阻器数字晶体管
页数	文件大小	规格书
3页	186K
描述
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)

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中文翻译

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DTB723YE_09 数据手册

-200mA / -30V Low V_CE(sat) Digital transistors

(with built-in resistors)

DTB723YE / DTB723YM

zApplications

zDimensions (Unit : mm)

Inverter, Interface, Driver

DTB723YE

0.7

1.6

0.55

0.3

zFeature

( )

1) V^CE(sat) is lower than conventional products.

2) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external input resistors

(see equivalent circuit).

3) The bias resistors consist of thin-film resistors

with complete isolation to allow positive biasing of the input.

They also have the advantage

(

)

( )

0.2

0.15

(1) GND

(2) IN

(3) OUT

0.5

1.0

EMT3

JEITA No. (SC-75A)

JEDEC No. <SOT-416>

Each lead has same dimensions

of almost completely eliminating parasitic effects.

4) Only the on / off conditions need to be set for operation,

making the device design easy.

Abbreviated symbol : M52

DTB723YM

1.2

0.32

(3)

zStructure

PNP epitaxial plannar silicon transistor

(Resistor built-in type)

(

)( )

0.22

(1) IN

(2) GND

(3) OUT

0.13

0.4 0.4

0.5

0.8

VMT3

zPackaging specifications

Each lead has same dimensions

Abbreviated symbol : M52

Package

EMT3

Taping

VMT3

Taping

T2L

Packaging type

Code

Basic ordering

unit (pieces)

3000

8000

Part No.

DTB723YE

DTB723YM

−

zAbsolute maximum ratings (Ta=25°C)

zInner circuit

Limits

Parameter

Symbol

Unit

DTB723YE DTB723YM

OUT

Supply voltage

C (max)

−30

−15 to +5

−200

Input voltage

GND(+)

OUT

∗1

∗2

Collector current

Power dissipation

Junction temperature

Storage temperature

150

Tstg

150

GND(+)

−55 to +150

∗1 Characteristics of built-in transistor.

∗2 Each terminal mounted on a recommended land.

=2.2kΩ / R =10kΩ

www.rohm.com

2009.10 - Rev.C

1/2

12 3

中文翻译

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与DTB723YE_09相关器件

型号	品牌	获取价格	描述	数据表
DTB723YETL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
DTB723YM	ROHM	获取价格	-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
DTB723YMT2L	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
DTB743EE	ROHM	获取价格	-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
DTB743EE_09	ROHM	获取价格	-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
DTB743EETL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, PNP, Silicon, EMT3, SC-75A, 3 PIN
DTB743EM	ROHM	获取价格	-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
DTB743EMT2L	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, PNP, Silicon, VMT3, 3 PIN
DTB743XE	ROHM	获取价格	-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
DTB743XETL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO