Datasheet > DTB743EE_09

DTB743EE_09

更新时间： 2024-11-25 06:54:51

品牌	Logo	应用领域
罗姆 - ROHM		晶体电阻器数字晶体管
页数	文件大小	规格书
3页	179K
描述
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)

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中文翻译

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DTB743EE_09 数据手册

-200mA / -30V Low V_CE(sat) Digital transistors

(with built-in resistors)

DTB743EE / DTB743EM

zApplications

zDimensions (Unit : mm)

Inverter, Interface, Driver

DTB743EE

0.7

1.6

0.55

0.3

zFeature

( )

1.V^{CE (sat)}is lower than the conventional products.

2.Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors (see equivalent circuit).

3.The bias resistors consist of thin-film resistors with complete

isolation to allow positive biasing of the input. They also have

the advantage of almost completely eliminating parasitic effects.

4.Only the on / off conditions need to be set for operation,

making the device design easy.

(

)

( )

0.2

0.15

(1) GND

(2) IN

(3) OUT

0.5

1.0

EMT3

JEITA No. (SC-75A)

JEDEC No. <SOT-416>

Each lead has same dimensions

Abbreviated symbol : M13

DTB743EM

zStructure

PNP epitaxial plannar silicon transistor

(Resistor built-in type)

1.2

0.32

(3)

( )( )

1 2

0.22

(1) IN

(2) GND

(3) OUT

0.13

0.4 0.4

0.5

zPackaging specifications

0.8

VMT3

Package

EMT3

Taping

VMT3

Taping

T2L

Each lead has same dimensions

Abbreviated symbol : M13

Packaging type

Code

Basic ordering

unit (pieces)

3000

8000

Part No.

DTB743EE

DTB743EM

−

zAbsolute maximum ratings (Ta=25°C)

zInner circuit

Limits

Parameter

Symbol

Unit

DTB743EE DTB743EM

OUT

Supply voltage

C (max)

−30

−20 to +10

−200

Input voltage

∗1

∗2

Collector current

Power dissipation

Junction temperature

Storage temperature

GND(+)

OUT

150

Tstg

150

−55 to +150

GND(+)

∗1 Characteristics of built-in transistor.

∗2 Each terminal mounted on a recommended land.

=4.7kΩ / R =4.7kΩ

www.rohm.com

2009.05 - Rev.B

1/2

12 3

中文翻译

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