DTB743XM

更新时间： 2024-09-25 03:30:43

品牌	Logo	应用领域
罗姆 - ROHM		晶体电阻器数字晶体管
页数	文件大小	规格书
2页	59K
描述
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)

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中文翻译

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DTB743XM 数据手册

DTB743XE / DTB743XM

Transistors

-200mA / -30V Low VCE (sat) Digital transistors

(with built-in resistors)

DTB743XE / DTB743XM

zApplications

zExternal dimensions (Unit : mm)

Inverter, Interface, Driver

DTB743XE

0.7

1.6

0.3

0.55

zFeature

( )

1) V^CE(sat)is lower than the conventional products.

2) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

(

)

( )

0.2

0.15

(1) GND

(2) IN

(3) OUT

0.5 0.5

1.0

EMT3

JEITA No. (SC-75A)

JEDEC No. <SOT-416>

Each lead has same dimensions

3) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the

input. They also have the advantage of almost

completely eliminating parasitic effects.

Abbreviated symbol : M33

DTB743XM

1.2

0.32

(3)

4) Only the on / off conditions need to be set for

operation, making the device design easy.

(

)( )

0.22

(1) IN

(2) GND

(3) OUT

0.13

0.4 0.4

0.5

0.8

VMT3

zStructure

Each lead has same dimensions

Abbreviated symbol : M33

PNP epitaxial plannar silicon transistor

(Resistor built-in type)

zAbsolute maximum ratings (Ta=25°C)

zPackaging specifications

Package

EMT3

Taping

VMT3

Taping

T2L

Limits

Parameter

Supply voltage

Symbol

Unit

Packaging type

Code

DTB743XE DTB743XM

C (max)

−30

−20 to +7

−200

Basic ordering

unit (pieces)

Input voltage

3000

8000

Part No.

∗1

∗2

Collector current

Power dissipation

Junction temperature

Storage temperature

DTB743XE

DTB743XM

−

150

−

Tstg

150

−55 to +150

∗1 Characteristics of built-in transistor.

∗2 Each terminal mounted on a recommended land.

zElectrical characteristics (Ta=25°C)

zEquivalent circuit

Parameter

Symbol Min.

Typ. Max. Unit

Conditions

CC= −5V, I = −100µA

=−0.3V, I =−20mA

/I =−50mA / −2.5mA

= −5V

CC=−30V, V

=−2V, I =−100mA

CE=−10V

I(off)

−

−2.5

−

−0.3

−

Input voltage

OUT

I(on)

Output voltage

Input current

O(on)

−70

−

−300

−1.4

−0.5

−

µA

−

IO I

−

GND(+)

OUT

Output current

DC current gain

Transition frequency

Input resistance

Resistance ratio

O(off)

−

I=0V

140

−

∗

260

4.7

2.1

−

MHz

kΩ

−

=5mA, f=100MHz

GND(+)

3.29

1.7

6.11

2.6

−

2/R1

∗ Characteristics of built-in transistor.

=4.7kΩ / R =10kΩ

1/1

中文翻译

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与DTB743XM相关器件

型号	品牌	获取价格	描述	数据表
DTB743ZE	ROHM	获取价格	-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
DTB743ZE_11	ROHM	获取价格	200mA / ?30V Low VCE (sat) Digital transistors
DTB743ZETL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, PNP, Silicon, ROHS COMPLIANT, SC-75
DTB743ZM	ROHM	获取价格	-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
DTB8C	ONSEMI	获取价格	TRIAC,200V V(DRM),8A I(T)RMS,TO-220
DTB8E	ETC	获取价格	TRIAC\|400V V(DRM)\|8A I(T)RMS\|TO-220
DTB8F	ETC	获取价格	TRIAC\|500V V(DRM)\|8A I(T)RMS\|TO-220
DTB8G	ETC	获取价格	TRIAC\|600V V(DRM)\|8A I(T)RMS\|TO-220
DTBFHPA14BKBD	AMPHENOL	获取价格	Circular Connector
DTBFHPA14BLGY	AMPHENOL	获取价格	Circular Connector

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