DTB743ZE

更新时间： 2024-11-25 03:30:43

品牌	Logo	应用领域
罗姆 - ROHM		晶体电阻器数字晶体管
页数	文件大小	规格书
2页	59K
描述
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)

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中文翻译

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DTB743ZE 数据手册

DTB743ZE / DTB743ZM

Transistors

-200mA / -30V Low VCE (sat) Digital transistors

(with built-in resistors)

DTB743ZE / DTB743ZM

zApplications

zExternal dimensions (Unit : mm)

Inverter, Interface, Driver

DTB743ZE

0.7

1.6

0.3

0.55

zFeature

( )

1) V^CE(sat)is lower than conventional products.

2) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

(

)

( )

0.2

0.15

(1) GND

(2) IN

(3) OUT

0.5 0.5

1.0

EMT3

JEITA No. (SC-75A)

JEDEC No. <SOT-416>

Each lead has same dimensions

3) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the

input. They also have the advantage of almost

completely eliminating parasitic effects.

Abbreviated symbol : P13

DTB743ZM

1.2

0.32

4) Only the on / off conditions need to be set for

operation, making the device design easy.

(3)

( )( )

1 2

0.22

(1) IN

0.13

0.4 0.4

0.5

(2) GND

(3) OUT

0.8

zStructure

VMT3

PNP epitaxial plannar silicon transistor

(Resistor built-in type)

Each lead has same dimensions

Abbreviated symbol : P13

zAbsolute maximum ratings (Ta=25°C)

zPackaging specifications

Package

EMT3

Taping

VMT3

Taping

T2L

Limits

Parameter

Supply voltage

Symbol

Unit

Packaging type

Code

DTB743ZE DTB743ZM

C (max)

−30

−20 to +5

−200

Input voltage

Basic ordering

unit (pieces)

3000

8000

∗1

∗2

Collector current

Power dissipation

Junction temperature

Storage temperature

Part No.

150

DTB743ZE

DTB743ZM

−

Tstg

150

−

−55 to +150

∗1 Characteristics of built-in transistor.

∗2 Each terminal mounted on a recommended land.

zElectrical characteristics (Ta=25°C)

zEquivalent circuit

Parameter

Symbol Min.

Typ. Max. Unit

Conditions

V^I(off)

VI(on)

VO(on)

−

−2.5

−

−0.3

−

V^CC= −5V, IO= −100µA

V^O=−0.3V, IO=−20mA

I^O/II=−50mA / −2.5mA

V^I= −5V

OUT

Input voltage

Output voltage

Input current

−70

−

−300

−1.4

−0.5

−

µA

−

GND(+)

OUT

Output current

DC current gain

Transition frequency

Input resistance

Resistance ratio

IO(off)

−

V^CC=−30V, VI=0V

V^O=−2V, IO=−100mA

140

−

∗

260

4.7

−

MHz V^CE=−10V

IE=5mA, f=100MHz

GND(+)

3.29

8.0

6.11

kΩ

−

R2/R1

−

=4.7kΩ / R =47kΩ

∗ Characteristics of built-in transistor.

1/1

中文翻译

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与DTB743ZE相关器件

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DTB743ZE_11	ROHM	获取价格	200mA / ?30V Low VCE (sat) Digital transistors
DTB743ZETL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, PNP, Silicon, ROHS COMPLIANT, SC-75
DTB743ZM	ROHM	获取价格	-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
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