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DTA114TKA PDF预览

DTA114TKA

更新时间: 2024-11-04 09:58:03
品牌 Logo 应用领域
RECTRON 晶体小信号双极晶体管数字晶体管
页数 文件大小 规格书
3页 293K
描述
SOT-23-3L DIGITAL TRANSISTORS TRANSISTORS(PNP)

DTA114TKA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.57Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):265
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

DTA114TKA 数据手册

 浏览型号DTA114TKA的Datasheet PDF文件第2页浏览型号DTA114TKA的Datasheet PDF文件第3页 
RECTRON  
TECHNICAL SPECIFICATION  
SEMICONDUCTOR  
DTA114TKA  
SOT-23-3L DIGITAL TRANSISTORS  
TRANSISTORS(PNP)  
FEATURES  
Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistors.(see equi-  
valent circuit).  
*
The bias resistors conisit of thin-film resistors with co-  
mplete isolation to without connecting external input.  
They also have the advantage of almost completely El-  
iminating parasitic effects.  
*
SOT-23-3L  
Only the on/off conditions need to be set for operation mark-  
ing device design easy.  
*
MECHANICAL DATA  
* Case: Molded plastic  
(1)  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
(3)  
(2)  
* Weight: 0.009 gram  
(
)
)
.067 1.70  
(
)
f .028 0.70  
(
.059 1.50  
(
)
0.116 2.95  
0.104(2.65)  
R.002  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25OC ambient temperature unless otherwise specified.  
(
)
.05  
(
)
)
.049 1.25  
(
.041 1.05  
(2)  
(1)  
(
)
)
.004 0.10  
(1) BASE  
(
.000 0.00  
(2) EMITTER  
(3) COLLECTOR  
Dimensions in inches and (millimeters)  
(3)  
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )  
RATINGS  
Collector-Base Voltage  
SYMBOL  
VALUE  
UNITS  
V
V
CBO  
V
CEO  
-50  
-50  
-5  
Collector-Emitter Voltage  
V
V
V
Emitter-base Voltage  
EBO  
Collector Continuous Current  
Collector Dissipation  
I
-100  
mA  
mW  
oC  
C
PC  
200  
-55 to +150  
Junction and storage Temperature  
TJ  
,TSTG  
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS SYMBOL  
Collector-base breakdown voltage (I = -50µA,I =0)  
MIN.  
-50  
TYP.  
-
MAX.  
-
UNITS  
V
V
V
C
E
(BR)CBO  
Collector-emitter breakdown voltage (I = -1mA,I =0)  
-50  
-5  
-
-
-
-
V
V
C
B
(BR)CEO  
Emitter-base breakdown voltage (I = -50µA,I =0)  
V
(BR)EBO  
E
C
Collector cut-off current (V = -50V,I =0)  
I
-
-
-0.5  
-0.5  
600  
-0.3  
µA  
µA  
CB  
E
CBO  
Emitter cut-off current (V = -4V,I =0)  
I
-
100  
-
-
250  
-
EB  
C
EBO  
DC current gain (V = -5V,I = -1mA)  
h
CE  
C
FE  
Collector-emitter saturation voltage (I = -10mA,I = -1mA)  
V
CE(sat)  
V
C
B
Transistion frequency (V = -10V,I = -5mA,f=100MHz)  
f
-
250  
10  
-
MHz  
KΩ  
CE  
C
T
R1  
Input resistor  
Note: "Fully ROHS compliant", "100% Sn plating (Pb-free)".  
7
13  
2006-3  

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