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DTA114TM PDF预览

DTA114TM

更新时间: 2024-11-04 12:53:51
品牌 Logo 应用领域
TYSEMI 电阻器
页数 文件大小 规格书
2页 169K
描述
Built-In Bias Resistors Enable The Configuration of An Inverter Circuit Without Connecting External Input Resistors

DTA114TM 数据手册

 浏览型号DTA114TM的Datasheet PDF文件第2页 
Product specification  
DTA114TM  
Features  
PNP Epitaxial Planar Silicon Transistor (Resistor Built-In Typ.)  
Built-In Bias Resistors Enable The Configuration of An Inverter  
Circuit Without Connecting External Input Resistors  
(See Equivalent Circuit).  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-50  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-50  
V
-5  
V
-100  
mA  
mW  
Collector Power Dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
BVCBO  
BVCEO IC = -1mA  
BVEBO  
ICBO  
Testconditons  
Min  
-50  
-50  
-5  
Typ  
Max  
Unit  
V
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
IC = -50  
A
V
V
IE = -50  
A
VCB = -50V  
VEB = -4V  
-0.5  
-0.5  
-0.3  
600  
13  
A
Emitter Cut-off Current  
IEBO  
A
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
Input Resistance  
VCE(sat) IC = -10mA , IB = -1mA  
V
hFE  
R1  
VCE = -5V , IC = -1mA  
100  
7
250  
10  
k
Transistion Frequency  
fT *  
VCE = -10V , IE = 5mA , f = 100MHz  
250  
MHz  
* Characteristics of built-in transistor  
Marking  
Marking  
94  
http://www.twtysemi.com  
1of 2  
sales@twtysemi.com  
4008-318-123  

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