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DTA114-TM PDF预览

DTA114-TM

更新时间: 2024-11-04 12:56:07
品牌 Logo 应用领域
TSC 晶体晶体管
页数 文件大小 规格书
2页 97K
描述
PNP Digital Transistor

DTA114-TM 数据手册

 浏览型号DTA114-TM的Datasheet PDF文件第2页 
DTA114 TM/TE/TUA/TCA/TSA  
PNP Digital Transistor  
Small Signal Diode  
Features  
Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input resistor  
(see equivalent circuit).  
The bias resistors consist of thin -film resistors with  
complete isolation to allow negative biasing of the  
input.They also have the advantage of almost  
completely eliminating parasitic effects.  
Only the on/off conditions need to be set for  
operation,marking device design easy.  
Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code.  
3
SOT-723/SOT-523  
SOT-323/SOT-23  
1
Ordering Information  
1.IN  
2.GND  
2
Part No.  
Package  
SOT-723  
SOT-523  
SOT-323  
SOT-23  
Packing  
8K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
Marking  
3.OUT  
DTA114 TM  
DTA114 TE  
DTA114 TUA  
DTA114 TCA  
DTA114 TSA  
94  
94  
94  
94  
TO-92S  
1.GND  
2.OUT  
3.IN  
TO-92S  
1
2
3
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Value  
Type Number  
Power Dissipation  
Symbol  
Units  
TUA TCA  
200  
TM  
100  
TSA  
300  
TE  
150  
PD  
mW  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Emitter-Base Voltage  
Collector Current  
VCBO  
VCEO  
-50  
V
-50  
VEBO  
IC  
-5  
-100  
mA  
°C  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Symbol Min Typ  
V(BR)CBO -50  
Max  
Condtion  
Unit  
V
Ic=-50µA,IE=0  
Ic=-1mA,IB=0  
IE=-50µA,IC=0  
V(BR)CEO -50  
V
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)EBO -5  
ICBO  
V
VCB=-50V,IE=0  
-0.5  
-0.5  
μA  
V
EB=-4V,IC=0  
Emitter cut-off current  
IEBO  
μA  
IC=-10mA,IB=-1mA  
VCE=-5V,IC=-1mA  
DC Current Gain  
Input Resistance  
VCE(sat)  
-0.3  
600  
V
hFE  
R1  
fT  
100  
7
250  
10  
Resistance Ratio  
13  
KΩ  
VCE=-10V,IE=-5mA, f=100MHz  
Transition Frequency  
250  
MHz  
Version:B12  

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