Datasheet > DTA114ES3

DTA114ES3

更新时间： 2024-09-17 04:39:19

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体数字晶体管
页数	文件大小	规格书
4页	165K
描述
PNP Digital Transistors (Built-in Resistors)

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数据手册

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DTA114ES3 数据手册

Spec. No. : C252S3

Issued Date : 2003.06.12

Revised Date :

CYStech Electronics Corp.

Page No. : 1/4

PNP Digital Transistors (Built-in Resistors)

DTA114ES3

Features

• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

resistors (see equivalent circuit).

• The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the

input. They also have the advantage of almost completely eliminating parasitic effects.

• Only the on/off conditions need to be set for operation, making device design easy.

• Complements the DTC114ES3

Equivalent Circuit

Outline

SOT-323

DTA114ES3

R1=10kΩ , R2=10 kΩ

IN(B) : Base

OUT(C) : Collector

GND(E) : Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Supply Voltage

Input Voltage

V^CC

V^IN

I^O

-50

-40~+10

-50

°C/W

°C

Output Current

I^O(max)

-100

Power Dissipation

200

Thermal Resistance, Junction to Ambient

Junction Temperature

R^θJA

Tstg

625

150

Storage Temperature

-55~+150

°C

DTA114ES3

CYStek Product Specification

12 3 4

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