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DSP8-12AC PDF预览

DSP8-12AC

更新时间: 2024-11-04 22:26:55
品牌 Logo 应用领域
IXYS 整流二极管
页数 文件大小 规格书
1页 396K
描述
Phase-leg Rectifier Diode ISOPLUS220

DSP8-12AC 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.81Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.22 V
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
最大非重复峰值正向电流:90 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:11 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1200 V子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSP8-12AC 数据手册

  
ADVANCE TECHNICAL INFORMATION  
DSP 8  
VRRM = 800/1200 V  
Phase-leg Rectifier Diode  
ISOPLUS220TM  
IF(AV)M = 2 x 11 A  
Electrically Isolated Back Surface  
ISOPLUS2
1
VRSM  
V
VRRM  
V
Type  
2
3
1
2
3
Isolated back surface *  
900  
800  
DSP 8-08AC  
DSP 8-12AC  
1300  
1200  
* Patent pending  
Symbol  
Test Conditions  
Maximum Ratings  
Features  
IFRMS  
TVJ = TVJM  
30  
A
A
l
Silicon chip on Direct-Copper-Bond  
IF(AV)M  
Tcase = 100°C; 180° sine  
2 x 11  
substrate  
IFSM  
TVJ = 45°C; t = 10 ms  
(50 Hz), sine  
(60 Hz), sine  
(50 Hz), sine  
(60 Hz), sine  
(50 Hz), sine  
(60 Hz), sine  
(50 Hz), sine  
(60 Hz), sine  
100  
105  
A
A
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
t = 8.3 ms  
TVJ = 150°C; t = 10 ms  
85  
90  
50  
45  
35  
30  
A
t = 8.3 ms  
A
l
For single and three phase bridge  
I2t  
TVJ = 45°C  
t = 10 ms  
t = 8.3 ms  
A2s  
A2s  
A2s  
A2s  
configuration  
l
Low cathode to tab capacitance (<15pF)  
TVJ = 150°C; t = 10 ms  
l
Planar passivated chips  
t = 8.3 ms  
l
Epoxy meets UL 94V-0  
TVJ  
-40...+150  
150  
°C  
°C  
°C  
TVJM  
Tstg  
-55...+150  
ISOPLUS220 Outline  
TL  
VISOL  
FC  
1.6 mm (0.063 in) from case for 10 s  
50/60 Hz RMS; IISOL 1 mA  
Mounting Force  
260  
°C  
V~  
N/lb  
g
2500  
11...65 / 2.5..15  
2
Weight  
Symbol  
Test Conditions  
Characteristic Values  
Q
IR  
VR = VRRM; TVJ = 25°C  
TVJ = 150°C  
10  
0.7  
µA  
mA  
R
VF  
IF = 10 A; TVJ = 25°C  
TVJ = 125°C  
1.22  
1.26  
V
V
V
For power-loss calculations only  
TVJ = TVJM  
0.8  
41  
V
rTT0  
mΩ  
RthJC  
DC current  
1.8  
0.6  
100  
K/W  
RthCK  
DC current (with heatsink compound)  
typ.  
K/W  
a
Maximum allowable acceleration  
m/s2  
Notes: Data given for TVJ = 25OC and per diode unless otherwise specified  
Q Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %  
RPulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2001 IXYS All rights reserved  
98820 (04/01)  

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