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DSP8-12AS PDF预览

DSP8-12AS

更新时间: 2024-11-04 22:26:55
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描述
Phase-leg Rectifier Diode

DSP8-12AS 技术参数

是否无铅:不含铅生命周期:Transferred
零件包装代码:D2PAK包装说明:R-PSSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.71Is Samacsys:N
其他特性:UL RECOGNIZED应用:GENERAL PURPOSE
外壳连接:ANODE AND CATHODE配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.15 VJEDEC-95代码:TO-263AA
JESD-30 代码:R-PSSO-G3JESD-609代码:e3
最大非重复峰值正向电流:100 A元件数量:2
相数:1端子数量:3
最高工作温度:180 °C最低工作温度:-40 °C
最大输出电流:11 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1200 V最大反向电流:500 µA
子类别:Rectifier Diodes表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSP8-12AS 数据手册

  
DSP 8  
VRRM = 800/1200 V  
IF(RMS) = 2 x 17 A  
IF(AV)M = 2 x 11 A  
Phase-leg  
Rectifier Diode  
TO-220 AB  
TO-263 AA  
VRSM  
V
VRRM  
V
TO-220 AB  
Type  
TO-263 AA  
1
2
3
900  
1300  
800  
1200  
DSP 8-08A  
DSP 8-12A  
DSP 8-08AS  
DSP 8-12AS  
1
3
1
3
2
2
(TAB)  
(TAB)  
Symbol  
Test Conditions  
Maximum Ratings  
1 = Cathode, 2 = Anode/Cathode, 3 = Anode  
TAB = Anode/Cathode  
IFRMS  
IF(AV)M  
TVJ = TVJM  
Tcase = 100°C; 180° sine  
17  
11  
A
A
IFSM  
TVJ = 45°C; t = 10 ms  
(50 Hz), sine  
(60 Hz), sine  
100  
110  
A
A
Features  
International standard packages  
t = 8.3 ms  
T
VJ = 150°C; t = 10 ms  
(50 Hz), sine  
(60 Hz), sine  
90  
100  
A
A
A2s  
A2s  
A2s  
A2s  
JEDEC TO-220 AB and TO-263 AA  
surface mountable  
For single and three phase bridge  
configuration  
Planar passivated chips  
t = 8.3 ms  
I2t  
TVJ = 45°C  
t = 10 ms  
t = 8.3 ms  
(50 Hz), sine  
(60 Hz), sine  
50  
50  
TVJ = 150°C; t = 10 ms  
(50 Hz), sine  
(60 Hz), sine  
41  
42  
Epoxy meets UL 94V-0 flammability  
classification  
t = 8.3 ms  
TVJ  
TVJM  
Tstg  
-40...+180  
180  
-40...+150  
°C  
°C  
°C  
TO-263 AA Outline  
Md  
Mounting torque  
0.4...0.6  
2/4  
Nm  
g
Weight  
TO-263/TO-220  
Symbol  
Test Conditions  
Characteristic Values  
IR  
TVJ = 25°C  
VR = VRRM  
£
£
0.5  
mA  
V
VF  
IF = 7 A; TVJ = 25°C  
1.15  
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
0.8  
40  
V
mW  
RthJC  
RthCK  
DC current  
DC current (with heatsink compound)  
3.5  
0.6  
K/W  
K/W  
typ.  
a
Maximum allowable acceleration  
100  
m/s2  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
TO-220 AB Outline  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
A
B
12.70 13.97 0.500 0.550  
14.73 16.00 0.580 0.630  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
C
D
9.91 10.66 0.390 0.420  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
3.54  
4.08 0.139 0.161  
E
F
5.85  
2.54  
6.85 0.230 0.270  
3.18 0.100 0.125  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
G
H
1.15  
2.79  
1.65 0.045 0.065  
5.84 0.110 0.230  
E
E1  
e
9.65 10.29  
6.86 8.13  
2.54 BSC  
14.61 15.88  
.380  
.270  
.100 BSC  
.405  
.320  
J
K
0.64  
2.54  
1.01 0.025 0.040  
BSC 0.100  
BSC  
L
.575  
.625  
M
N
4.32  
1.14  
4.82 0.170 0.190  
1.39 0.045 0.055  
L1  
L2  
2.29  
1.02  
2.79  
1.40  
.090  
.040  
.110  
.055  
Q
R
0.38  
2.29  
0.56 0.015 0.022  
2.79 0.090 0.110  
L4  
R
0
0.46  
0.38  
0.74  
0
.018  
.015  
.029  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions  
1 - 1  
© 2000 IXYS All rights reserved  

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