Datasheet > DSEI8

DSEI8

更新时间： 2024-01-20 22:30:31

品牌	Logo	应用领域
IXYS		二极管
页数	文件大小	规格书
2页	85K
描述
Fast Recovery Epitaxial Diode (FRED)

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中文翻译

获取价格

数据手册

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DSEI8 数据手册

DSEI 8 I_FAVM= 8 A

V_RRM= 600 V

Fast Recovery

Epitaxial Diode (FRED)

t_rr

= 35 ns

TO-263 AA

DSEI 8-06AS

V_RSM

V_RRM

Type

640

600

DSEI 8-06A

DSEI 8-06AS

C (TAB)

Symbol

I_FRMS

Test Conditions

Maximum Ratings

TO-220 AC

DSEI 8-06A

T_VJ= T_VJM

I_FAVM

I_FRM

①

T_C= 115°C; rectangular, d = 0.5

t_P< 10 ms; rep. rating, pulse width limited by T_VJM

130

I_FSM

T_VJ= 45°C; t = 10 ms (50 Hz), sine

100

110

A = Anode, C = Cathode, NC = No connection

TAB = Cathode

t = 8.3 ms (60 Hz), sine

T_VJ= 150°C; t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

I²t

T_VJ= 45°C

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

A²s

Features

International standard package

T_VJ= 150°C; t = 10 ms (50 Hz), sine

A²s

①

t = 8.3 ms (60 Hz), sine

JEDEC TO-220 AC & TO-263 AB

Planar passivated chips

Very short recovery time

Extremely low switching losses

Low I_RM-values

Soft recovery behaviour

Epoxy meets UL 94V-0

①

T_VJ

T_VJM

T_stg

-40...+150

150

-40...+150

°C

①

P_tot

M_d

T_C= 25°C

0.4...0.6

①

Mounting torque

①

Weight

Symbol

I_R

Applications

①

Antiparallel diode for high frequency

switching devices

Anti saturation diode

Snubber diode

Free wheeling diode in converters

and motor control circuits

Rectifiers in switch mode power

Test Conditions

Characteristic Values

max.

①

typ.

①

T_VJ= 25°C

V_R= V_RRM

V_R= 0.8 • V_RRM

①

T_VJ= 125°C V_R= 0.8 • V_RRM

1.5

①

V_F

I_F= 8 A;

T_VJ= 150°C

T_VJ= 25°C

1.3

1.5

supplies (SMPS)

Inductive heating and melting

Uninterruptible power supplies (UPS)

Ultrasonic cleaners and welders

①

V_T0

r_T

For power-loss calculations only

T_VJ= T_VJM

0.98

28.7

①

R_thJC

R_thCK

R_thJA

2.5

K/W

Advantages

①

0.5

High reliability circuit operation

Low voltage peaks for reduced

①

protection circuits

Low noise switching

Low losses

Operating at lower temperature or

t_rr

I_F= 1 A; -di/dt = 50 A/ms; V_R= 30 V; T_VJ= 25°C

①

I_RM

V_R= 350 V; I_F= 8 A; -di_F/dt = 64 A/ms

L £ 0.05 mH; T_VJ= 100°C

2.5

2.8

①

space saving by reduced cooling

① I_FAVMrating includes reverse blocking losses at T_VJM, V_R= 0.8 V_RRM, duty cycle d = 0.5

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

1 - 2

中文翻译

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与DSEI8相关器件

型号	品牌	获取价格	描述	数据表
DSEI8-04A	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon,
DSEI8-05A	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 500V V(RRM), Silicon,
DSEI8-06A	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED)
DSEI8-06A	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI8-06AS	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED)
DSEI8-06AS	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEK30	IXYS	获取价格	Common Cathode Fast Recovery Epitaxial Diode (FRED)
DSEK300-06A	LITTELFUSE	获取价格	Rectifier Diode, 1 Phase, 2 Element, 600V V(RRM), Silicon,
DSEK30-02A	IXYS	获取价格	HiPerFRED Epitaxial Diode with common cathode and soft recovery
DSEK30-06A	IXYS	获取价格	Rectifier Diode, 1 Phase, 2 Element, 30A, 600V V(RRM), Silicon, TO-247AD,

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