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DS1245ABP-100-IND PDF预览

DS1245ABP-100-IND

更新时间: 2024-11-14 22:05:15
品牌 Logo 应用领域
达拉斯 - DALLAS 存储内存集成电路静态存储器
页数 文件大小 规格书
12页 223K
描述
1024k Nonvolatile SRAM

DS1245ABP-100-IND 技术参数

生命周期:Transferred包装说明:POWERCAP-34
Reach Compliance Code:unknown风险等级:5.63
Is Samacsys:N最长访问时间:100 ns
其他特性:10 YEAR DATA RETENTION PERIODJESD-30 代码:R-XDMA-U34
内存密度:1048576 bit内存集成电路类型:NON-VOLATILE SRAM MODULE
内存宽度:8功能数量:1
端口数量:1端子数量:34
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
输出特性:3-STATE可输出:YES
封装主体材料:UNSPECIFIED封装等效代码:MODULE,34LEAD,1.0
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified最大待机电流:0.005 A
子类别:SRAMs最大压摆率:0.085 mA
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:J INVERTED端子位置:DUAL
Base Number Matches:1

DS1245ABP-100-IND 数据手册

 浏览型号DS1245ABP-100-IND的Datasheet PDF文件第2页浏览型号DS1245ABP-100-IND的Datasheet PDF文件第3页浏览型号DS1245ABP-100-IND的Datasheet PDF文件第4页浏览型号DS1245ABP-100-IND的Datasheet PDF文件第5页浏览型号DS1245ABP-100-IND的Datasheet PDF文件第6页浏览型号DS1245ABP-100-IND的Datasheet PDF文件第7页 
DS1245Y/AB  
1024k Nonvolatile SRAM  
www.dalsemi.com  
FEATURES  
PIN ASSIGNMENT  
10 years minimum data retention in the  
absence of external power  
NC  
A16  
A14  
A12  
A7  
1
32  
31  
VCC  
A15  
NC  
WE  
A13  
A8  
2
3
4
30  
29  
Data is automatically protected during power  
loss  
Replaces 128k x 8 volatile static RAM,  
EEPROM or Flash memory  
Unlimited write cycles  
Low-power CMOS  
5
6
28  
27  
A6  
A5  
A4  
A9  
7
8
26  
25  
A11  
OE  
A10  
CE  
A3  
9
24  
23  
A2  
10  
A1  
Read and write access times as fast as 70 ns  
Lithium energy source is electrically  
disconnected to retain freshness until power is  
applied for the first time  
Full ±10% VCC operating range (DS1245Y)  
Optional ±5% VCC operating range  
(DS1245AB)  
Optional industrial temperature range of  
-40°C to +85°C, designated IND  
JEDEC standard 32-pin DIP package  
New PowerCap Module (PCM) package  
11  
12  
22  
21  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
A0  
DQ0  
DQ1  
DQ2  
GND  
13  
14  
15  
16  
20  
19  
18  
17  
32-PIN ENCAPSULATED PACKAGE  
740 MIL EXTENDED  
NC  
NC  
A14  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
NC  
A15  
A16  
A13  
A12  
A11  
A10  
A9  
NC  
-
-
Directly surface-mountable module  
Replaceable snap-on PowerCap provides  
lithium backup battery  
VCC  
WE  
OE  
CE  
A8  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
-
-
Standardized pinout for all nonvolatile  
SRAM products  
Detachment feature on PowerCap allows  
easy removal using a regular screwdriver  
GND VBAT  
DQ2  
DQ1  
DQ0  
GND  
34-PIN POWERCAP MODULE (PCM)  
(USES DS9034PC POWERCAP)  
PIN DESCRIPTION  
A0 - A16  
DQ0 - DQ7  
CE  
- Address Inputs  
- Data In/Data Out  
- Chip Enable  
- Write Enable  
- Output Enable  
- Power (+5V)  
- Ground  
WE  
OE  
VCC  
GND  
NC  
- No Connect  
1 of 12  
111899  

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