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DRAF114E PDF预览

DRAF114E

更新时间: 2024-11-21 20:38:19
品牌 Logo 应用领域
松下 - PANASONIC 开关晶体管
页数 文件大小 规格书
3页 418K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ML3-N4-B, 3 PIN

DRAF114E 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CHIP CARRIER, R-XBCC-N3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.74
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1外壳连接:COLLECTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):35
JESD-30 代码:R-XBCC-N3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:CHIP CARRIER极性/信道类型:PNP
最大功率耗散 (Abs):0.1 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DRAF114E 数据手册

 浏览型号DRAF114E的Datasheet PDF文件第2页浏览型号DRAF114E的Datasheet PDF文件第3页 
DRAF114E  
Total pages  
page  
Tentative  
DRAF114E  
Silicon PNP epitaxial planar type  
For digital circuits  
Marking Symbol : LB  
Package Code : ML3-N4-B  
Internal Connection  
Absolute Maximum RatingsTa = 25 °C  
R1  
C
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
-50  
-50  
Unit  
V
V
B
-100  
100  
150  
mA  
mW  
°C  
R2  
Total power dissipation  
PT  
Junction temperature  
Tj  
E
Storage temperature  
Tstg  
-55 to +150  
°C  
kΩ  
kΩ  
Resistance R1 10  
R2 10  
value  
1. Base  
2. Emitter  
3. Collector  
Pin name  
Electrical CharacteristicsTa = 25 °C±3 °C  
Parameter  
Symbol  
Conditions  
Min Typ Max  
-50  
Unit  
V
Collector-base voltage (Emitter open)  
VCBO IC = -10 μA, IE = 0  
Collector-emitter voltage (Base open)  
VCEO IC = -2 mA, IB = 0  
-50  
V
Collector-base cutoff current (Emitter open) ICBO  
Collector-emitter cutoff current (Base open) ICEO  
Emitter-base cutoff current (Collector open) IEBO  
VCB = -50 V, IE = 0  
VCE = -50 V, IB = 0  
VEB = -6 V, IC = 0  
-0.1  
-0.5  
-0.5  
μA  
μA  
mA  
-
Forward current transfer ratio  
hFE  
VCE = -10 V, IC = -5 mA  
35  
Collector-emitter saturation voltage  
VCE(sat) IC = -10 mA, IB = -0.5 mA  
-0.25  
V
Vi(on) VCE = -0.2 V, IC = -5 mA  
Vi(off) VCE = -5 V, IC = -100 μA  
-2.1  
Input voltage  
V
-0.8  
kΩ  
-
Input resistance  
Resistance ratio  
R1  
R1/R2  
-30% 10 +30%  
0.8 1.0 1.2  
Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring  
methods for transistors.  
Packing  
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel  
2010.2.25  
Prepared  
2010.7.9  
Revised  
Semiconductor Company, Panasonic Corporation  

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