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DRAF143T0L PDF预览

DRAF143T0L

更新时间： 2024-11-21 21:12:39
品牌 Logo 应用领域
松下 - PANASONIC 开关晶体管
页数 文件大小 规格书
2页 250K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE, ML3-N4-B, 3 PIN

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DRAF143T0L 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：CHIP CARRIER, R-XBCC-N3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.72
外壳连接：COLLECTOR最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：160JESD-30 代码：R-XBCC-N3
元件数量：1端子数量：3
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER极性/信道类型：PNP
最大功率耗散 (Abs)：0.1 W子类别：BIP General Purpose Small Signal
表面贴装：YES端子形式：NO LEAD
端子位置：BOTTOM晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DRAF143T0L 数据手册

 浏览型号DRAF143T0L的Datasheet PDF文件第2页 
DRAF143T  
Silicon PNP epitaxial planar type  
For digital circuits  
Complementary to DRCF143T  
DRA3143T in ML3 type package  
Features  
ꢀPackage  
ꢀCode  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, mount area reduction  
Eco-friendly Halogen-free package  
ML3-N4-B  
Package dimension clicks here.→  
Click!  
ꢀPin Name  
1: Base  
Packaging  
DRAF143T0L Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)  
2: Emitter  
3: Collector  
ꢀAbsolute Maximum Ratings T = 25°C  
a
ꢀMarking Symbol: LA  
ꢀInternal Connection  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Unit  
V
C
E
–50  
V
R1  
B
–100  
mA  
mW  
°C  
Total power dissipation *  
Junction temperature  
PT  
100  
Tj  
150  
Resistance value  
R1  
4.7  
kΩ  
Storage temperature  
T
stg  
–55 to +150  
°C  
Note) : Copper plate at the collector is 5.0 mm2 on substrate at 10 mm × 12 mm × 0.8 mm.  
*
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
– 0.01  
460  
µA  
µA  
mA  
V
VCE = –10 V, IC = –5 mA  
160  
–1.0  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
V
Input voltage (OFF)  
VI(off) VCE = –5 V, IC = –100 µA  
R1  
– 0.4  
V
Input resistance  
–30%  
4.7  
+30%  
kΩ  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: March 2012  
Ver. AED  
1
12

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