5秒后页面跳转
捷配首页

Datasheet > DRAF123Y0L
DRAF123Y0L PDF预览

DRAF123Y0L

更新时间： 2024-11-07 19:55:51
品牌 Logo 应用领域
松下 - PANASONIC 开关晶体管
页数 文件大小 规格书
2页 253K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE, ML3-N4-B, 3 PIN

阅读下载

中文翻译

获取价格

DRAF123Y0L 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：CHIP CARRIER, R-XBCC-N3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.75
其他特性：BUILT IN BIAS RESISITANCE RATIO 4.55外壳连接：COLLECTOR
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：30
JESD-30 代码：R-XBCC-N3元件数量：1
端子数量：3封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
极性/信道类型：PNP最大功率耗散 (Abs)：0.1 W
子类别：BIP General Purpose Small Signal表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

DRAF123Y0L 数据手册

 浏览型号DRAF123Y0L的Datasheet PDF文件第2页 
DRAF123Y  
Silicon PNP epitaxial planar type  
For digital circuits  
Complementary to DRCF123Y  
DRA3123Y in ML3 type package  
Features  
ꢀPackage  
ꢀCode  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, mount area reduction  
Eco-friendly Halogen-free package  
ML3-N4-B  
Package dimension clicks here.→  
Click!  
Packaging  
ꢀPin Name  
1: Base  
DRAF123Y0L Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)  
2: Emitter  
3: Collector  
ꢀAbsolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Unit  
V
ꢀMarking Symbol: L3  
ꢀInternal Connection  
–50  
V
C
E
R1  
–100  
mA  
mW  
°C  
B
Total power dissipation *  
Junction temperature  
PT  
100  
R2  
Tj  
150  
Storage temperature  
T
–55 to +150  
°C  
stg  
R1  
R2  
2.2  
10  
kΩ  
kΩ  
Resistance value  
Note) : Copper plate at the collector is 5.0 mm2 on substrate at 10 mm × 12 mm × 0.8 mm.  
*
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
–1.0  
µA  
µA  
mA  
V
VCE = –10 V, IC = –5 mA  
30  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
–1.1  
V
Input voltage (OFF)  
VI(off) VCE = –5 V, IC = –100 µA  
– 0.5  
+30%  
0.27  
V
Input resistance  
R1  
–30%  
0.17  
2.2  
kΩ  
Resistance ratio  
R1 / R2  
0.22  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: March 2012  
Ver. AED  
1
12

中文翻译

下载PDF

与DRAF123Y0L相关器件

型号 品牌 获取价格 描述 数据表
DRAF124E PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ML3-N4-
DRAF124T PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ML3-N4-
DRAF124T0L PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN
DRAF124X PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ML3-N4-
DRAF143E PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ML3-N4-
DRAF143E0L PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN
DRAF143T0L PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN
DRAF143X PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ML3-N4-
DRAF143X0L PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN
DRAF143Z0L PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN

与DRAF123Y0L相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证