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DRAF123Y0L PDF预览

DRAF123Y0L

更新时间： 2024-11-21 19:55:51
品牌 Logo 应用领域
松下 - PANASONIC 开关晶体管
页数 文件大小 规格书
2页 253K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE, ML3-N4-B, 3 PIN

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DRAF123Y0L 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：CHIP CARRIER, R-XBCC-N3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.75
其他特性：BUILT IN BIAS RESISITANCE RATIO 4.55外壳连接：COLLECTOR
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：30
JESD-30 代码：R-XBCC-N3元件数量：1
端子数量：3封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
极性/信道类型：PNP最大功率耗散 (Abs)：0.1 W
子类别：BIP General Purpose Small Signal表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

DRAF123Y0L 数据手册

 浏览型号DRAF123Y0L的Datasheet PDF文件第2页 
DRAF123Y  
Silicon PNP epitaxial planar type  
For digital circuits  
Complementary to DRCF123Y  
DRA3123Y in ML3 type package  
Features  
ꢀPackage  
ꢀCode  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, mount area reduction  
Eco-friendly Halogen-free package  
ML3-N4-B  
Package dimension clicks here.→  
Click!  
Packaging  
ꢀPin Name  
1: Base  
DRAF123Y0L Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)  
2: Emitter  
3: Collector  
ꢀAbsolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Unit  
V
ꢀMarking Symbol: L3  
ꢀInternal Connection  
–50  
V
C
E
R1  
–100  
mA  
mW  
°C  
B
Total power dissipation *  
Junction temperature  
PT  
100  
R2  
Tj  
150  
Storage temperature  
T
–55 to +150  
°C  
stg  
R1  
R2  
2.2  
10  
kΩ  
kΩ  
Resistance value  
Note) : Copper plate at the collector is 5.0 mm2 on substrate at 10 mm × 12 mm × 0.8 mm.  
*
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
–1.0  
µA  
µA  
mA  
V
VCE = –10 V, IC = –5 mA  
30  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
–1.1  
V
Input voltage (OFF)  
VI(off) VCE = –5 V, IC = –100 µA  
– 0.5  
+30%  
0.27  
V
Input resistance  
R1  
–30%  
0.17  
2.2  
kΩ  
Resistance ratio  
R1 / R2  
0.22  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: March 2012  
Ver. AED  
1
12

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