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DRA3A14Y0L PDF预览

DRA3A14Y0L

更新时间： 2024-11-21 14:49:39
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 489K
描述
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE, SSSMINI3-F2-B, 3 PIN

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DRA3A14Y0L 技术参数

生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.74
Is Samacsys：N其他特性：BUILT IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC)：0.08 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-F3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：PNP表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

DRA3A14Y0L 数据手册

 浏览型号DRA3A14Y0L的Datasheet PDF文件第2页浏览型号DRA3A14Y0L的Datasheet PDF文件第3页浏览型号DRA3A14Y0L的Datasheet PDF文件第4页 
DRA3A14Y  
Silicon PNP epitaxial planar type  
For digital circuits  
Complementary to DRC3A14Y  
DRA9A14Y in SSSMini3 type package  
Features  
ꢀPackage  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
ꢀCode  
SSSMini3-F2-B  
ꢀPin Name  
1: Base  
Packaging  
2: Emitter  
3: Collector  
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)  
ꢀMarking Symbol: GJ  
ꢀInternal Connection  
ꢀAbsolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
–50  
Unit  
V
C
E
R1  
B
–50  
V
R2  
–80  
mA  
mW  
°C  
Total power dissipation  
PT  
100  
R1  
R2  
10  
47  
kΩ  
kΩ  
Resistance value  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
–50  
–50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
V
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = –50 V, IE = 0  
VCE = –50 V, IB = 0  
VEB = –6 V, IC = 0  
– 0.1  
– 0.5  
– 0.2  
µA  
µA  
mA  
V
VCE = –10 V, IC = –5 mA  
80  
VCE(sat) IC = –10 mA, IB = – 0.5 mA  
VI(on) VCE = – 0.2 V, IC = –5 mA  
– 0.25  
–1.7  
V
Input voltage (OFF)  
VI(off) VCE = –5 V, IC = –100 µA  
– 0.5  
+30%  
0.25  
V
Input resistance  
R1  
–30%  
0.17  
10  
kΩ  
Resistance ratio  
R1 / R2  
0.21  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: December 2011  
Ver. AED  
1
1234

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