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DPG20C200PN PDF预览

DPG20C200PN

更新时间: 2024-11-06 12:52:39
品牌 Logo 应用领域
IXYS 二极管快速恢复二极管
页数 文件大小 规格书
4页 135K
描述
HiPerFRED2 High Performance Fast Recovery Diode Low Loss and Soft Recovery

DPG20C200PN 数据手册

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DPG 20 C 200 PN  
VRRM  
IFAV = 2x  
trr  
=
200 V  
HiPerFRED²  
A
10  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Common Cathode  
=
35 ns  
Part number  
1
2
3
DPG 20 C 200 PN  
Backside: isolated  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Very low leakage current  
Very short recovery time  
Improved thermal behaviour  
Very low Irm-values  
Very soft recovery behaviour  
Avalanche voltage rated for reliable operation  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Housing: TO-220FP  
rIndustry standard outline  
rPlastic overmolded tab for  
r electrical isolation  
rIsolation Voltage 2500 V  
rUL registered E 72873  
rEpoxy meets UL 94V-0  
rRoHS compliant  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
R a t i n g s  
Conditions  
Symbol  
VRRM  
IR  
Definition  
min. typ. max. Unit  
TVJ  
200  
V
max. repetitive reverse voltage  
reverse current  
=
=
25°C  
25°C  
µA  
VR = 200V  
VR = 200V  
TVJ  
1
TVJ = 150°C  
TVJ 25°C  
0.06 mA  
forward voltage  
VF  
IF  
IF  
IF  
IF  
=
=
=
=
10A  
20A  
10A  
20A  
=
1.27  
1.45  
0.98  
1.17  
10  
V
V
V
V
A
V
Ω
T
VJ = 150°C  
IFAV  
VF0  
rF  
TC = 125°C  
TVJ = 175°C  
average forward current  
threshold voltage  
rectangular  
d = 0.5  
0.74  
17.7  
for power loss calculation only  
slope resistance  
m
RthJC  
TVJ  
Ptot  
IFSM  
IRM  
4.40 K/W  
thermal resistance junction to case  
virtual junction temperature  
total power dissipation  
-55  
175  
35  
°C  
W
A
TC  
=
=
=
25°C  
45°C  
25°C  
max. forward surge current  
max. reverse recovery current  
TVJ  
TVJ  
140  
t = 10 ms (50 Hz), sine  
3
5.5  
35  
A
A
IF = 10A; VR = 130V  
-diF/dt = 200 A/µs  
TVJ = 125°C  
TVJ 25°C  
TVJ = 125°C  
TVJ 25°C  
reverse recovery time  
junction capacitance  
trr  
=
ns  
ns  
pF  
45  
CJ  
VR = 150 V; f = 1 MHz  
=
15  
IXYS reserves the right to change limits, conditions and dimensions.  
20090323a  
Data according to IEC 60747and per diode unless otherwise specified  
2009 IXYS all rights reserved  
©

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