Datasheet > DPG20C200PN

DPG20C200PN

更新时间： 2024-11-05 12:52:39

品牌	Logo	应用领域
IXYS		二极管快速恢复二极管
页数	文件大小	规格书
4页	135K
描述
HiPerFRED2 High Performance Fast Recovery Diode Low Loss and Soft Recovery

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

DPG20C200PN 数据手册

DPG 20 C 200 PN

V_RRM

I_FAV= 2x

t_rr

200 V

HiPerFRED²

High Performance Fast Recovery Diode

Low Loss and Soft Recovery

Common Cathode

35 ns

Part number

DPG 20 C 200 PN

Backside: isolated

Features / Advantages:

Applications:

Package:

● Planar passivated chips

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Very soft recovery behaviour

● Avalanche voltage rated for reliable operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

● Housing: TO-220FP

●rIndustry standard outline

●rPlastic overmolded tab for

●r electrical isolation

●rIsolation Voltage 2500 V

●rUL registered E 72873

●rEpoxy meets UL 94V-0

●rRoHS compliant

- Power dissipation within the diode

- Turn-on loss in the commutating switch

R a t i n g s

Conditions

Symbol

V_RRM

I_R

Definition

min. typ. max. Unit

T_VJ

200

max. repetitive reverse voltage

reverse current

25°C

µA

V_R= 200V

T_VJ

T_VJ= 150°C

T_VJ25°C

0.06 mA

forward voltage

V_F

I_F

10A

20A

10A

20A

1.27

1.45

0.98

1.17

_VJ= 150°C

I_FAV

V_F0

r_F

T_C= 125°C

T_VJ= 175°C

average forward current

threshold voltage

rectangular

d = 0.5

0.74

17.7

for power loss calculation only

slope resistance

R_thJC

T_VJ

P_tot

I_FSM

I_RM

4.40 K/W

thermal resistance junction to case

virtual junction temperature

total power dissipation

-55

175

°C

T_C

25°C

45°C

25°C

max. forward surge current

max. reverse recovery current

T_VJ

140

t = 10 ms (50 Hz), sine

5.5

I_F= 10A; V_R= 130V

-di_F/dt = 200 A/µs

T_VJ= 125°C

T_VJ25°C

T_VJ= 125°C

T_VJ25°C

reverse recovery time

junction capacitance

t_rr

C_J

V_R= 150 V; f = 1 MHz

IXYS reserves the right to change limits, conditions and dimensions.

20090323a

Data according to IEC 60747and per diode unless otherwise specified

12 3 4

中文翻译

下载PDF

DPG20C200PN 替代型号

型号	品牌	替代类型	描述	数据表
DSA20C150PB	IXYS	类似代替	High Performance Schottky Diode
DPG20C300PN	IXYS	类似代替	High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode
DSEC16-12A	IXYS	类似代替	HiPerFREDTM Epitaxial Diode with common cathode and soft recovery

与DPG20C200PN相关器件

型号	品牌	获取价格	描述	数据表
DPG20C300PB	IXYS	获取价格	High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode
DPG20C300PB	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DPG20C300PN	IXYS	获取价格	High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode
DPG20C300PN	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DPG20C400PB	IXYS	获取价格	HiPerFREDÂ²
DPG20C400PB	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DPG20C400PC	IXYS	获取价格	HiPerFREDÂ²
DPG20C400PC	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DPG20C400PC-TRL	IXYS	获取价格	Rectifier Diode,
DPG20C400PC-TUB	IXYS	获取价格	Rectifier Diode,

与DPG20C200PN相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

DPG20C200PN

DPG20C200PN 数据手册

DPG20C200PN 替代型号

与DPG20C200PN相关器件

与DPG20C200PN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DPG20C200PN

DPG20C200PN 数据手册

DPG20C200PN 替代型号

与DPG20C200PN相关器件

与DPG20C200PN相关文章

您还可以找

您在本页遇到什么问题？