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DPG30C200PC PDF预览

DPG30C200PC

更新时间: 2024-11-05 20:47:39
品牌 Logo 应用领域
IXYS 软恢复二极管快速软恢复二极管
页数 文件大小 规格书
5页 128K
描述
Rectifier Diode, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

DPG30C200PC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, PLASTIC, D2PAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.67
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE应用:FAST SOFT RECOVERY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.01 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2最大非重复峰值正向电流:240 A
元件数量:2相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DPG30C200PC 数据手册

 浏览型号DPG30C200PC的Datasheet PDF文件第2页浏览型号DPG30C200PC的Datasheet PDF文件第3页浏览型号DPG30C200PC的Datasheet PDF文件第4页浏览型号DPG30C200PC的Datasheet PDF文件第5页 
DPG30C200PC  
VRRM  
IFAV  
trr  
=
=
=
200V  
15A  
HiPerFRED²  
2x  
35ns  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Common Cathode  
Part number  
DPG30C200PC  
Backside: cathode  
1
4
3
TO-263 (D2Pak)  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Very low leakage current  
Very short recovery time  
Improved thermal behaviour  
Very low Irm-values  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode  
Industry standard outline  
RoHS compliant  
Epoxy meets UL 94V-0  
Very soft recovery behaviour  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Avalanche voltage rated for reliable operation  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20131126a  
© 2013 IXYS all rights reserved  

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