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DPG30P300PJ PDF预览

DPG30P300PJ

更新时间: 2024-11-18 19:59:39
品牌 Logo 应用领域
力特 - LITTELFUSE 软恢复二极管快速软恢复二极管
页数 文件大小 规格书
5页 140K
描述
Rectifier Diode, 1 Phase, 2 Element, 30A, 300V V(RRM), Silicon, TO-273AA, ROHS COMPLIANT, PLASTIC, ISOPLUS220, 3 PIN

DPG30P300PJ 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSIP-T3Reach Compliance Code:compliant
风险等级:5.62其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, UL RECOGNIZED
应用:FAST SOFT RECOVERY外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.99 V
JEDEC-95代码:TO-273AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e1最大非重复峰值正向电流:450 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:300 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DPG30P300PJ 数据手册

 浏览型号DPG30P300PJ的Datasheet PDF文件第2页浏览型号DPG30P300PJ的Datasheet PDF文件第3页浏览型号DPG30P300PJ的Datasheet PDF文件第4页浏览型号DPG30P300PJ的Datasheet PDF文件第5页 
DPG30P300PJ  
VRRM = 2x 300V  
HiPerFRED²  
IFAV  
trr  
=
=
30A  
35ns  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Phase leg  
Part number  
DPG30P300PJ  
Backside: isolated  
1
2
3
ISOPLUS220  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Very low leakage current  
Very short recovery time  
Improved thermal behaviour  
Very low Irm-values  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Isolation Voltage:  
Industry standard outline  
RoHS compliant  
Epoxy meets UL 94V-0  
Soldering pins for PCB mounting  
Backside: DCB ceramic  
Reduced weight  
V~  
3600  
Very soft recovery behaviour  
Avalanche voltage rated for reliable operation  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
Advanced power cycling  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20131125a  
© 2013 IXYS all rights reserved  

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