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DPG30C300PB PDF预览

DPG30C300PB

更新时间: 2024-11-18 12:44:55
品牌 Logo 应用领域
IXYS 二极管快恢复二极管局域网软恢复二极管快速软恢复二极管
页数 文件大小 规格书
3页 107K
描述
High Performance Fast Recovery Diode

DPG30C300PB 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-220AB包装说明:R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:8.26其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
应用:FAST SOFT RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.01 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:300 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DPG30C300PB 数据手册

 浏览型号DPG30C300PB的Datasheet PDF文件第2页浏览型号DPG30C300PB的Datasheet PDF文件第3页 
DPG 30 C 200 HB  
advanced  
VRRM  
IFAV = 2x  
trr  
=
200 V  
HiPerFRED  
A
15  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Common Cathode  
=
35 ns  
Part number  
1
2
3
DPG 30 C 200 HB  
Backside: cathode  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Very low leakage current  
Very short recovery time  
Improved thermal behaviour  
Very low Irm-values  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode  
Housing: TO-247  
rIndustry standard outline  
rEpoxy meets UL 94V-0  
rRoHS compliant  
Very soft recovery behaviour  
Avalanche voltage rated for reliable operation  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
R a t i n g s  
Conditions  
Symbol  
VRRM  
IR  
Definition  
min. typ. max. Unit  
TVJ  
200  
V
max. repetitive reverse voltage  
reverse current  
=
=
25°C  
25°C  
µA  
VR = 200V  
VR = 200V  
TVJ  
1
TVJ = 150°C  
TVJ 25°C  
0.08 mA  
forward voltage  
VF  
IF  
IF  
IF  
IF  
=
=
=
=
15A  
30A  
15A  
30A  
=
1.25  
1.50  
1.00  
1.27  
15  
V
V
V
V
A
V
Ω
T
VJ = 150°C  
IFAV  
VF0  
rF  
TC = 140°C  
TVJ = 175°C  
average forward current  
threshold voltage  
rectangular, d = 0.5  
0.69  
17.3  
for power loss calculation only  
slope resistance  
m
RthJC  
TVJ  
Ptot  
IFSM  
IRM  
1.70 K/W  
thermal resistance junction to case  
virtual junction temperature  
total power dissipation  
-55  
175  
90  
°C  
W
A
TC  
=
=
=
=
=
=
=
25°C  
45°C  
25°C  
°C  
(50 Hz), sine  
max. forward surge current  
max. reverse recovery current  
TVJ  
TVJ  
TVJ  
TVJ  
TVJ  
TVJ  
150  
t = 10 ms  
3
tbd  
35  
A
A
IF = 20A; VR = 100 V  
-diF/dt = 200 A/µs  
reverse recovery time  
junction capacitance  
trr  
25°C  
°C  
ns  
ns  
pF  
tbd  
tbd  
CJ  
VR = 100V; f = 1 MHz  
25°C  
IXYS reserves the right to change limits, conditions and dimensions.  
0629  
Data according to IEC 60747and per diode unless otherwise specified  
© 2007 IXYS all rights reserved  

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