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DPG15I200PA PDF预览

DPG15I200PA

更新时间： 2024-11-30 12:54:27
品牌 Logo 应用领域
IXYS 二极管快恢复二极管软恢复二极管
页数 文件大小 规格书
4页 112K
描述
High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode

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中文翻译

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DPG15I200PA 数据手册

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DPG 15 I 200 PA  
VRRM  
IFAV  
trr  
=
=
=
200 V  
HiPerFRED²  
A
15  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Single Diode  
35 ns  
Part number  
DPG 15 I 200 PA  
3
1
Backside: cathode  
Features / Advantages:  
Applications:  
Package:  
● Planar passivated chips  
● Very low leakage current  
● Very short recovery time  
● Improved thermal behaviour  
● Very low Irm-values  
● Antiparallel diode for high frequency  
switching devices  
● Antisaturation diode  
● Snubber diode  
● Free wheeling diode  
● Housing: TO-220  
●rIndustry standard outline  
●rEpoxy meets UL 94V-0  
●rRoHS compliant  
● Very soft recovery behaviour  
● Avalanche voltage rated for reliable operation  
● Soft reverse recovery for low EMI/RFI  
● Low Irm reduces:  
● Rectifiers in switch mode power  
supplies (SMPS)  
● Uninterruptible power supplies (UPS)  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
R a t i n g s  
Conditions  
Symbol  
VRRM  
IR  
Definition  
min. typ. max. Unit  
TVJ  
200  
V
max. repetitive reverse voltage  
reverse current  
=
=
25°C  
25°C  
µA  
VR = 200V  
VR = 200V  
TVJ  
1
TVJ = 150°C  
TVJ 25°C  
0.08 mA  
forward voltage  
VF  
IF  
IF  
IF  
IF  
=
=
=
=
15A  
30A  
15A  
30A  
=
1.26  
1.51  
1.01  
1.29  
15  
V
V
V
V
A
V
T
VJ = 150°C  
IFAV  
VF0  
rF  
TC = 140°C  
TVJ = 175°C  
average forward current  
threshold voltage  
rectangular  
d = 0.5  
0.69  
for power loss calculation only  
slope resistance  
18 mΩ  
RthJC  
TVJ  
Ptot  
IFSM  
IRM  
1.70 K/W  
thermal resistance junction to case  
virtual junction temperature  
total power dissipation  
-55  
175  
90  
°C  
W
A
TC  
=
=
25°C  
45°C  
max. forward surge current  
max. reverse recovery current  
TVJ  
240  
t = 10 ms (50 Hz), sine  
3
6.5  
35  
A
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
A
IF = 15 A; VR = 130V  
-diF/dt = 200 A/µs  
reverse recovery time  
junction capacitance  
trr  
ns  
ns  
pF  
55  
CJ  
VR = 150 V; f = 1 MHz  
TVJ  
=
25°C  
20  
IXYS reserves the right to change limits, conditions and dimensions.  
20100125a  
Data according to IEC 60747and per diode unless otherwise specified  
2010 IXYS all rights reserved  
©
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