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DPG10P400PJ PDF预览

DPG10P400PJ

更新时间: 2024-11-30 20:03:03
品牌 Logo 应用领域
力特 - LITTELFUSE 软恢复二极管快速软恢复二极管
页数 文件大小 规格书
5页 140K
描述
Rectifier Diode, 1 Phase, 2 Element, 10A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, ISOPLUS220, 3 PIN

DPG10P400PJ 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, ISOPLUS220, 3 PINReach Compliance Code:compliant
风险等级:5.75其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, UL RECOGNIZED
应用:FAST SOFT RECOVERY外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.03 V
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
最大非重复峰值正向电流:130 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.045 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DPG10P400PJ 数据手册

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DPG10P400PJ  
VRRM = 2x 400V  
HiPerFRED²  
IFAV  
trr  
=
=
10A  
45ns  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Phase leg  
Part number  
DPG10P400PJ  
Backside: isolated  
1
2
3
ISOPLUS220  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Very low leakage current  
Very short recovery time  
Improved thermal behaviour  
Very low Irm-values  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Isolation Voltage:  
Industry standard outline  
RoHS compliant  
Epoxy meets UL 94V-0  
Soldering pins for PCB mounting  
Backside: DCB ceramic  
Reduced weight  
V~  
3600  
Very soft recovery behaviour  
Avalanche voltage rated for reliable operation  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
Advanced power cycling  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20131101a  
© 2013 IXYS all rights reserved  

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