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DN0150BLP4-7 PDF预览

DN0150BLP4-7

更新时间： 2024-02-27 06:19:39
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管
页数 文件大小 规格书
4页 110K
描述
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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DN0150BLP4-7 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DFN
包装说明：CHIP CARRIER, R-PBCC-N3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：15 weeks风险等级：1.67
其他特性：HIGH RELIABILITY外壳连接：COLLECTOR
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE最小直流电流增益 (hFE)：200
JESD-30 代码：R-PBCC-N3JESD-609代码：e4
湿度敏感等级：1元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：0.45 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：40晶体管元件材料：SILICON
标称过渡频率 (fT)：60 MHzBase Number Matches：1

DN0150BLP4-7 数据手册

 浏览型号DN0150BLP4-7的Datasheet PDF文件第2页浏览型号DN0150BLP4-7的Datasheet PDF文件第3页浏览型号DN0150BLP4-7的Datasheet PDF文件第4页 
DN0150ALP4 / DN0150BLP4  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
Epitaxial Die Construction  
Ultra-Small Leadless Surface Mount Package  
Ultra Low Profile (0.4mm max)  
Complementary PNP Type Available (DP0150ALP4 /  
DP0150BLP4)  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
•
•
Case: DFN1006H4-3  
Case Material: Molded Plastic, "Green" Molding Compound. UL  
Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections Indicator: Collector Dot  
Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable  
per MIL-STD-202, Method 208  
Ordering Information: See Page 3  
Marking Information: See Page 3  
Weight: 0.0008 grams (approximate)  
•
•
•
•
•
•
•
•
•
Qualified to AEC-Q 101 Standards for High Reliability  
1
3
2
E
B
C
Bottom View  
Top View  
Device Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
Value  
60  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
50  
V
Collector-Emitter Voltage  
5
V
Emitter-Base Voltage  
Collector Current – Continuous  
Peak Pulse Collector Current  
Base Current  
100  
200  
30  
mA  
mA  
mA  
ICM  
IB  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 3)  
Symbol  
PD  
Value  
450  
Unit  
mW  
°C/W  
°C  
Thermal Resistance, Junction to Ambient (Note 3)  
Operating and Storage Temperature Range  
278  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 4)  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
60  
50  
5
—
—
—
—
—
—
—
—
—
—
0.1  
0.1  
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC = 10μA, IE = 0  
IC = 1mA, IB = 0  
IE = 10μA, IC = 0  
VCB = 60V, IE = 0  
VEB = 5V, IC = 0  
μA  
μA  
Emitter Cut-Off Current  
IEBO  
ON CHARACTERISTICS (Note 4)  
Collector-Emitter Saturation Voltage  
DC Current Gain  
—
120  
200  
0.10  
—
—
0.25  
240  
400  
V
VCE(SAT)  
hFE  
IC = 100mA, IB = 10mA  
VCE = 6V, IC = 2mA  
DN0150ADJ  
DN0150BDJ  
—
SMALL SIGNAL CHARACTERISTICS  
VCE = 10V, IE = -1mA  
f = 30MHz  
Transition Frequency  
60  
—
—
—
—
MHz  
fT  
V
CB = 10V, IE = 0,  
Output Capactiance  
1.3  
pF  
Cob  
f = 1MHz  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB with minimum recommended pad layout.  
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%  
1 of 4  
www.diodes.com  
July 2009  
© Diodes Incorporated  
DN0150ALP4 / DN0150BLP4  
Document number: DS31492 Rev. 3 - 2  
1234

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