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DN030U PDF预览

DN030U

更新时间: 2024-02-23 16:10:32
品牌 Logo 应用领域
可天士 - KODENSHI 晶体小信号双极晶体管
页数 文件大小 规格书
4页 296K
描述
Extremely low collector-to-emitter saturation voltage

DN030U 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.8
Is Samacsys:N最大集电极电流 (IC):0.3 A
配置:Single最小直流电流增益 (hFE):70
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

DN030U 数据手册

 浏览型号DN030U的Datasheet PDF文件第2页浏览型号DN030U的Datasheet PDF文件第3页浏览型号DN030U的Datasheet PDF文件第4页 
DN030U  
NPN Silicon Transistor  
Features  
Extremely low collector-to-emitter  
saturation voltage  
PIN Connection  
( VCE(SAT)= 0.1V Typ. @IC/IB=100mA/10mA)  
Suitable for low voltage large current drivers  
Complementary pair with DP030U  
Switching Application  
3
1
2
SOT-323  
Package Code  
SOT-323F  
Ordering Information  
Type NO.  
Marking  
NO1 □  
① ②  
DN030U  
Device Code Year&Week Code  
Absolute Maximum Ratings  
Characteristic  
(Ta=25°C)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
15  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
V
12  
5
V
Collector current  
300  
200  
150  
mA  
mW  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature range  
PC  
Tj  
Tstg  
-55~150  
°C  
Electrical Characteristics  
Characteristic  
(Ta=25°C)  
Symbol  
BVCEO  
ICBO  
Test Condition  
Min. Typ. Max. Unit  
Collector-emitter breakdown voltage  
Collector cut-off current  
IC=1mA, IB=0  
12  
-
-
0.1  
0.1  
450  
-
V
μA  
μA  
-
VCB=12V, IE=0  
-
-
Emitter cut-off current  
IEBO  
VEB=5V, IC=0  
-
200  
70  
-
-
VCE=1V, IC=100mA※  
VCE=1V, IC=300mA※  
IC=100mA, IB=10mA  
IC=300mA, IB=30mA※  
IC=100mA, IB=10mA  
IC=300mA, IB=30mA※  
VCE=5V, IC=10mA  
hFE1  
-
DC current gain  
hFE2  
-
-
VCE(sat1)  
VCE(sat2)  
VBE(sat1)  
VBE(sat2)  
fT  
-
-
0.2  
0.5  
1.2  
1.7  
-
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
-
-
-
V
V
-
-
Transition frequency  
-
300  
3
MHz  
PF  
Collector output capacitance  
※ Pulse test : tP250µs, Duty cycle2%  
Cob  
VCB=10V, IE=0, f=1MHz  
-
-
KSD-T5D007-000  
1

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