DN050

更新时间： 2024-02-01 11:19:02

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
4页	193K
描述
Extremely low collector-to-emitter saturation voltage

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中文翻译

获取价格

技术参数
数据手册

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DN050 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
最大集电极电流 (IC)：	0.5 A	配置：	Single
最小直流电流增益 (hFE)：	70	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

DN050 数据手册

DN050

NPN Silicon Transistor

Features

• Extremely low collector-to-emitter

saturation voltage

PIN Connection

( V_CE(SAT)=0.07V Typ. @I_C/I_B=100mA/10mA)

• Suitable for low voltage large current drivers

• Complementary pair with DP050

• Switching Application.

TO-92

Ordering Information

Type NO.

Marking

Package Code

DN050

TO-92

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

Ratings

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

V_CBO

V_CEO

V_EBO

I_C

500

°C

Collector dissipation

Junction temperature

Storage temperature

P_C

625

T_j

150

T_stg

-55~150

°C

Electrical Characteristics

Characteristic

(Ta=25°C)

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

Min. Typ. Max. Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

I_C=50μA, I_E=0

I_C=1mA, I_B=0

I_E=50μA, I_C=0

V_CB=12V, I_E=0

0.1

450

μA

Emitter cut-off current

I_EBO

V_EB=5V, I_C=0

h_FE1

V_CE=1V, I_C=100mA

V_CE=1V, I_C=500mA

I_C=100mA, I_B=10mA

V_CE=5V, I_C=20mA

V_CB=10V, I_E=0, f=1MHz

200

DC current gain

h_FE2

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

0.25

1.2

120

4.5

MHz

Collector output capacitance

C_ob

KSD-T0A036-000

12 3 4

中文翻译

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