DN030E

更新时间： 2024-01-18 06:19:38

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
3页	57K
描述
Extremely low collector-to-emitter saturation voltage

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DN030E 技术参数

DN030E

Semiconductor

NPN Silicon Transistor

Features

· Extremely low collector-to-emitter saturation voltage

( V_CE(SAT)= 0.1V Typ. @I /I_B=100mA/10mA)

· Suitable for low voltage^Clarge current drivers

· Complementary pair with DP030E

· Switching Application

Ordering Information

Type NO.

Marking

Package Code

SOT-523F

DN030E

N01

Outline Dimensions

unit : mm

1.60±0.1

0.88±0.1

PIN Connections

1. Base

2. Emitter

3. Collector

KST-4009-000

12 3

中文翻译

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型号	品牌	获取价格	描述	数据表
DN030S	KODENSHI	获取价格	Extremely low collector-to-emitter saturation voltage
DN030S	AUK	获取价格	NPN Silicon Transistor
DN030U	AUK	获取价格	NPN Silicon Transistor
DN030U	KODENSHI	获取价格	Extremely low collector-to-emitter saturation voltage
DN0408C404K	VISHAY	获取价格	RESISTOR, TEMPERATURE DEPENDENT, NTC, 400000 ohm, THROUGH HOLE MOUNT
DN050	AUK	获取价格	NPN Silicon Transistor
DN050	KODENSHI	获取价格	Extremely low collector-to-emitter saturation voltage
DN0503A152K	VISHAY	获取价格	RESISTOR, TEMPERATURE DEPENDENT, NTC, 1500 ohm, THROUGH HOLE MOUNT
DN0503A152K-01	VISHAY	获取价格	RESISTOR, TEMPERATURE DEPENDENT, NTC, 1500 ohm
DN0503A152K-05	VISHAY	获取价格	RESISTOR, TEMPERATURE DEPENDENT, NTC, 1500 ohm, THROUGH HOLE MOUNT