Datasheet > DN030S

DN030S

更新时间： 2024-09-23 03:30:07

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DN030S 技术参数

DN030S

Semiconductor

NPN Silicon Transistor

Features

· Extremely low collector-to-emitter saturation voltage

( V_CE(SAT)= 0.1V Typ. @I /I_B=100mA/10mA)

· Suitable for low voltage^Clarge current drivers

· Complementary pair with DP030S

· Switching Application

Ordering Information

Type NO.

Marking

Package Code

SOT-23F

DN030S

N01

Outline Dimensions

unit : mm

2.4±0.1

1.6±0.1

PIN Connections

1. Base

2. Emitter

3. Collector

KST-2109-000

12 3

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型号	品牌	获取价格	描述	数据表
DN030U	AUK	获取价格	NPN Silicon Transistor
DN030U	KODENSHI	获取价格	Extremely low collector-to-emitter saturation voltage
DN0408C404K	VISHAY	获取价格	RESISTOR, TEMPERATURE DEPENDENT, NTC, 400000 ohm, THROUGH HOLE MOUNT
DN050	AUK	获取价格	NPN Silicon Transistor
DN050	KODENSHI	获取价格	Extremely low collector-to-emitter saturation voltage
DN0503A152K	VISHAY	获取价格	RESISTOR, TEMPERATURE DEPENDENT, NTC, 1500 ohm, THROUGH HOLE MOUNT
DN0503A152K-01	VISHAY	获取价格	RESISTOR, TEMPERATURE DEPENDENT, NTC, 1500 ohm
DN0503A152K-05	VISHAY	获取价格	RESISTOR, TEMPERATURE DEPENDENT, NTC, 1500 ohm, THROUGH HOLE MOUNT
DN0503D151K	VISHAY	获取价格	RESISTOR, TEMPERATURE DEPENDENT, NTC, 150 ohm, THROUGH HOLE MOUNT
DN0503D151K-04	VISHAY	获取价格	RESISTOR, TEMPERATURE DEPENDENT, NTC, 150 ohm, THROUGH HOLE MOUNT