Datasheet > DMP57D5UFB-7

DMP57D5UFB-7

更新时间： 2024-02-29 02:22:31

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	214K
描述
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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DMP57D5UFB-7 数据手册

DMP57D5UFB

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Features

Mechanical Data

•

Low On-Resistance:

R_DS(ON)≤ 6Ω @ V_GS= -4.0V

_DS(ON)≤ 8Ω @ V_GS= -2.5V

•

Case: DFN1006-3

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish ⎯ NiPdAu over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.001 grams (approximate)

•

Very Low Gate Threshold Voltage, ≤ 1.0V

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

ESD Protected Gate, 1KV

Lead Free By Design/RoHS Compliant (Note 2)

"Green" Device (Note 4)

Qualified to AEC-Q101 Standards for High Reliability

•

Drain

DFN1006-3

Body

Diode

Gate

BOTTOM VIEW

Gate

Protection

Diode

ESD PROTECTED TO 1kV

TOP VIEW

Internal Schematic

Source

Equivalent Circuit

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

V_GSS

I_D

Value

-50

Units

Gate-Source Voltage

±8

Drain Current (Note 1)

Steady

-200

-700

T_A= 25°C

Pulsed Drain Current (Note 3)

I_DM

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

425

Units

P_D

294

°C/W

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 1)

Operating and Storage Temperature Range

R_θ

-55 to +150

°C

_J,T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

-50

⎯

BV_DSS

I_DSS

I_GSS

⎯

-10

_GS= 0V, I_D= -250μA

_DS= -50V, V_GS= 0V

_GS= ±8V, V_DS= 0V

μA

±500

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

-0.7

-1.0

V_GS(th)

⎯

_DS= V_GS, I_D= -250μA

V_GS= -4.0V, I_D= -100mA

_GS= -2.5V, I_D= -80mA

V_DS= -5V, I_D= -100mA

V_GS= 0V, I_S= -100mA

⎯

4.6

Static Drain-Source On-Resistance

R_{DS (ON)}

Forward Transfer Admittance

Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS

Input Capacitance

100

|Y_fs|

V_SD

⎯

-1.2

⎯

7.3

2.5

C_iss

C_oss

C_rss

⎯

V_DS= -4V, V_GS= 0V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Notes:

1. Device mounted on FR-4 PCB. t ≤5 sec.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

1 of 4

www.diodes.com

March 2008

DMP57D5UFB

Document number: DS31274 Rev. 3 - 2

12 3 4

中文翻译

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