Datasheet > DMP58D0SV

DMP58D0SV

更新时间： 2024-11-25 09:54:15

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	140K
描述
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

获取价格

数据手册

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DMP58D0SV 数据手册

DMP58D0SV

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Features

Mechanical Data

•

Low On-Resistance

ESD Protected Gate to 500V

Low Input Capacitance

Fast Switching Speed

Lead Free By Design/RoHS Compliant (Note 3)

“Green” Device (Note 4)

Qualified to AEC-Q 101 Standards for High Reliability

•

Case: SOT-563

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.006 grams (approximate)

•

SOT-563

G₁

S₁

D₂

G₂

S₂

D₁

TOP VIEW

Internal Schematic

TOP VIEW

ESD protected to 500V

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Symbol

V_DSS

V_DGR

V_GSS

I_D

Value

-50

Units

Drain-Source Voltage

Drain-Gate Voltage (Note 1)

-50

±20

-160

Gate-Source Voltage

Drain Current (Note 2)

Continuous

Thermal Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Total Power Dissipation (Note 2)

Thermal Resistance, Junction to Ambient (Note 2)

Operating and Storage Temperature Range

Symbol

P_D

R_θ

Value

400

313

Units

°C/W

°C

-55 to +150

T_J, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Symbol Min Typ Max Unit

Test Condition

V_GS= 0V, I_D= -250μA

-50

⎯

BV_DSS

I_DSS

⎯

-1

μA V_DS= -50V, V_GS= 0V

μA V_GS= ±20V, V_DS= 0V

I_GSS

⎯

±5

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

-0.8

⎯

0.05

-2.1

V_GS(th)

R_{DS (ON)}

g_FS

⎯

V_DS= V_GS, I_D= -250μA

V_GS= -5V, I_D= -0.100A

V_DS= -25V, I_D= -0.1A

Static Drain-Source On-Resistance

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance

⎯

C_iss

C_oss

C_rss

⎯

Output Capacitance

V_DS= -25V, V_GS= 0V, f = 1.0MHz

Reverse Transfer Capacitance

1.4

Notes:

1. R_GS≤ 20KΩ.

2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. No purposefully added lead.

4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

1 of 5

www.diodes.com

July 2009

DMP58D0SV

Document number: DS31293 Rev. 4 - 2

12 3 4 5

中文翻译

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