Datasheet > DMN4468LSS

DMN4468LSS

更新时间： 2022-10-27 10:32:03

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	168K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN4468LSS 数据手册

DMN4468LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

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Features

Mechanical Data

•

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 3)

"Green" Device (Note 4)

Qualified to AEC-Q101 Standards for High Reliability

•

Case: SOP-8L

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminal Connections: See Diagram Below

Marking Information: See Page 4

•

Ordering Information: See Page 4

Weight: 0.072 grams (approximate)

TOP VIEW

Internal Schematic

TOP VIEW

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Gate-Source Voltage

Symbol

VDSS

VGSS

Value

±20

Unit

Steady

State

TA = 25°C

TA = 70°C

Continuous Drain Current (Note 1)

Pulsed Drain Current (Note 2)

IDM

Thermal Characteristics

Characteristic

Symbol

Max

1.52

Unit

Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient @TA = 25°C

Operating and Storage Temperature Range

RθJA

TJ, TSTG

°C/W

°C

-55 to +150

Notes:

1. Device mounted on FR-4 PCB with minimum recommended pad layout.

2. Repetitive rating, pulse width limited by junction temperature.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

1 of 6

www.diodes.com

June 2009

DMN4468LSS

Document number: DS31773 Rev. 3 - 2

12 3 4 5 6

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