Datasheet > DMN52D0UV

DMN52D0UV

更新时间： 2024-11-29 14:55:31

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
8页	939K
描述
50V N-CHANNEL ENHANCEMENT MODE MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMN52D0UV 数据手册

DMN52D0UV

50V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Dual N Channel MOSFET

I_D

BV_DSS

R_DS(ON)Max

T_A= +25°C

Low On-Resistance

Very Low Gate Threshold Voltage, 1.0V Max

Low Input Capacitance

480mA

440mA

370mA

2Ω @ V_GS= 5V

2.5Ω @ V_GS= 2.5V

4Ω @ V_GS= 1.8V

Fast Switching Speed

50V

Low Input/Output Leakage

Ultra-Small Surface Mount Package

ESD Protected

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable,

and manufactured in IATF 16949 certified facilities), please

https://www.diodes.com/quality/product-definitions/

Description and Applications

This MOSFET is designed to minimize the on-state resistance

(R_DS(ON)) yet maintain superior switching performance, making it ideal

for high efficiency power management applications.

Mechanical Data



Battery management systems

Power management functions

Load switches



Package: SOT563

Package Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram



Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

Weight: 0.006 grams (Approximate)



SOT563

D 1

G 2

G 1

D 2

ESD Protected

Gate Protection

Diode

Gate Protection

Diode

Top View

Bottom View

Equivalent Circuit

Top View

Ordering Information (Note 4)

Packing

Part Number

Package

Qty.

Carrier

Reel

DMN52D0UV-7

DMN52D0UV-13

SOT563

3,000

10,000

Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

1 of 8

www.diodes.com

December 2022

DMN52D0UV

Document number: DS44809 Rev. 4 - 2

12 3 4 5 6 7 8

中文翻译

下载PDF

与DMN52D0UV相关器件

型号	品牌	获取价格	描述	数据表
DMN52D0UVA	DIODES	获取价格	50V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN52D0UVQ	DIODES	获取价格	50V N-Channel Enhancement Mode MOSFET
DMN52D0UVT	DIODES	获取价格	50V N-Channel Enhancement Mode MOSFET
DMN52D0UVTQ	DIODES	获取价格	50V N-Channel Enhancement Mode MOSFET
DMN53D0L	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN53D0L-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN53D0L-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN53D0LDW	DIODES	获取价格	Dual N-Channel MOSFET
DMN53D0LDW-13	DIODES	获取价格	Dual N-Channel MOSFET
DMN53D0LDW-7	DIODES	获取价格	Dual N-Channel MOSFET

与DMN52D0UV相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN52D0UV

DMN52D0UV 数据手册

与DMN52D0UV相关器件

与DMN52D0UV相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN52D0UV

DMN52D0UV 数据手册

与DMN52D0UV相关器件

与DMN52D0UV相关文章

您还可以找

您在本页遇到什么问题？